Han Han , Libor Strakoš , Clément Porret , Valérie Depauw , Tomáš Vystavěl , Olivier Richard , Marina Baryshnikova , Eva Grieten , Thomas Hantschel
{"title":"Applications of electron channeling pattern for the determination of wafer offcut and misorientation angles","authors":"Han Han , Libor Strakoš , Clément Porret , Valérie Depauw , Tomáš Vystavěl , Olivier Richard , Marina Baryshnikova , Eva Grieten , Thomas Hantschel","doi":"10.1016/j.micron.2025.103912","DOIUrl":null,"url":null,"abstract":"<div><div>The epitaxial growth of semiconductor multilayers often starts from monocrystalline wafers that have an offcut angle. This offcut angle is critical for tailoring the properties of epitaxial materials, making its precise control essential. This study demonstrates a novel approach to determine the wafer offcut angle based on electron channeling patterns (ECP) obtained by scanning electron microscopy. The technique involves calculating the angular distance between the zone axis and the surface normal by analyzing a series of ECP images acquired at various rotations/tilts. The method successfully applies to Si(001) substrates with different offcut angles, measured within ∼1 h with an angular accuracy of <span><math><mo>∼</mo></math></span>0.05°. Additionally, the misorientation between the overlaying semiconductor crystalline films and the substrate is estimated with a precision down to ∼ 0.03º within ∼ 30 min. This performance can meet the accuracy requirements for a wide range of industrial and research applications.</div></div>","PeriodicalId":18501,"journal":{"name":"Micron","volume":"199 ","pages":"Article 103912"},"PeriodicalIF":2.2000,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micron","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0968432825001301","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MICROSCOPY","Score":null,"Total":0}
引用次数: 0
Abstract
The epitaxial growth of semiconductor multilayers often starts from monocrystalline wafers that have an offcut angle. This offcut angle is critical for tailoring the properties of epitaxial materials, making its precise control essential. This study demonstrates a novel approach to determine the wafer offcut angle based on electron channeling patterns (ECP) obtained by scanning electron microscopy. The technique involves calculating the angular distance between the zone axis and the surface normal by analyzing a series of ECP images acquired at various rotations/tilts. The method successfully applies to Si(001) substrates with different offcut angles, measured within ∼1 h with an angular accuracy of 0.05°. Additionally, the misorientation between the overlaying semiconductor crystalline films and the substrate is estimated with a precision down to ∼ 0.03º within ∼ 30 min. This performance can meet the accuracy requirements for a wide range of industrial and research applications.
期刊介绍:
Micron is an interdisciplinary forum for all work that involves new applications of microscopy or where advanced microscopy plays a central role. The journal will publish on the design, methods, application, practice or theory of microscopy and microanalysis, including reports on optical, electron-beam, X-ray microtomography, and scanning-probe systems. It also aims at the regular publication of review papers, short communications, as well as thematic issues on contemporary developments in microscopy and microanalysis. The journal embraces original research in which microscopy has contributed significantly to knowledge in biology, life science, nanoscience and nanotechnology, materials science and engineering.