Enhanced bendability and viscoelastic behavior in high-quality 2H-SiC@SiO2nanowires.

Abstract

Silicon carbide nanowires (SiC NWs) combine the benefits of bulk SiC materials with the properties of low-dimensional nanomaterials. They are known for their excellent mechanical strength and durability, which are critical for their potential applications in high-stress environments and micro-nano functional systems. Here, the mechanical properties and deformation mechanisms of 2H-SiC NWs with rare defects in the [0001] orientation are reported. A series ofin situoperational experiments were carried out to evaluate the mechanical behavior and deformation processes of the nanowires, obtaining dynamic images, quantitative force profiles, stress-strain curves and lattice evolution during bending. Experimental results indicate that the maximum bending strain reached 17.7%, and the viscoelastic behavior during the recovery process after fracture was captured. Based on the elastic deformation and brittle fracture behavior of SiC NWs, this is attributed to the presence of the amorphous SiO₂layer encapsulating the surface of the nanowires, which can also enhance their flexibility, enabling their application under higher pressure conditions. These advancements contribute to the further mechanical design of SiC NWs, expand the photonic application scenarios, and promote their application in high-performance electronic devices.