Radiation-Tolerant SRAM for Satellite Image Compression Systems: A Hybrid Memory Array Approach

IF 1.6 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Priyanka Sharma, Vaibhav Neema, Shailesh Singh Chouhan, Nitesh Kumar Soni
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引用次数: 0

Abstract

This work is based on the design of an SRAM memory array for on board satellite image compression systems, including memory size, cost, power efficiency, and vulnerability to single event upsets (SEU). Initially, we designed a memory cell, RH_14T, specifically to mitigate the impact of SEUs. Subsequently, we incorporated RH_14T into the on-board memory array in two variations: RH_14T with minimal area overhead (RH_14T_small) and RH_14T with substantial area overhead (RH_14T_large), which have critical charges of 30.10 and 38.77 fC, respectively. Given the higher sensitivity of higher order bits compared to lower order bits in image pixels, RH_14T_small was allocated for the least significant bit (LSB) positions. RH_14_large, on the other hand, was used for the most significant bit (MSB) positions within the memory array. This configuration enhanced the array's overall area, power, and space radiation tolerance. Furthermore, the RH_14T model was bench marked against other recently introduced radiation-hardened SRAM cells and compared proposed RH_14T CC18T, RHC14T, RHMC12T, SARP12T, SRRD12T, DICE, and QUCCE12T across several critical design parameters. Notably, RH_14T's sensitive nodes can recover their original data even after radiation-induced value flips. In addition to these benefits, RH_14T also demonstrates a high static voltage noise margin and reduced read and write delays compared to most of the cells it was compared with.

用于卫星图像压缩系统的耐辐射SRAM:一种混合存储阵列方法
这项工作是基于机载卫星图像压缩系统的SRAM存储阵列的设计,包括内存大小、成本、功率效率和单事件干扰(SEU)的脆弱性。最初,我们设计了一个内存单元RH_14T,专门用于减轻seu的影响。随后,我们将RH_14T集成到板载存储器阵列中,分为两种类型:面积开销最小的RH_14T (RH_14T_small)和面积开销较大的RH_14T (RH_14T_large),它们的临界电荷分别为30.10和38.77 fC。考虑到图像像素中高阶比特比低阶比特的灵敏度更高,RH_14T_small被分配给最低有效位(LSB)位置。另一方面,RH_14_large用于内存数组中的最高有效位(MSB)位置。这种配置增强了阵列的总体面积、功率和空间辐射容忍度。此外,RH_14T模型与其他最近引入的抗辐射SRAM单元进行了基准测试,并在几个关键设计参数上比较了提出的RH_14T CC18T、RHC14T、RHMC12T、SARP12T、SRRD12T、DICE和QUCCE12T。值得注意的是,即使在辐射引起的值翻转之后,RH_14T的敏感节点也可以恢复其原始数据。除了这些优点之外,RH_14T还具有较高的静态电压噪声裕度,并且与与之比较的大多数电池相比,具有更低的读写延迟。
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来源期刊
International Journal of Circuit Theory and Applications
International Journal of Circuit Theory and Applications 工程技术-工程:电子与电气
CiteScore
3.60
自引率
34.80%
发文量
277
审稿时长
4.5 months
期刊介绍: The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.
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