A novel thermal network model and electro-thermal coupling study for NSFETs and CFETs considering thermal crosstalk

IF 3 Q2 PHYSICS, CONDENSED MATTER
Tianci Miao , Qihang Zheng , Yangyang Hu , Xiaoyu Cheng , Jie Liang , Liang Chen , Aiying Guo , Jingjing Liu , Kailin Ren , Jianhua Zhang
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Abstract

As the process node of logic integrated circuits continues to shrink to chase the Moore's Law, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become candidates for the 3 nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and inter-device thermal crosstalk of NSFETs and CFETs become more severe, leading to degradation of on-state current, threshold voltage shift, and reduced reliability. It is of great significance to accurately calculate the self-heating and thermal crosstalk of devices and to investigate their influences on the electrical and thermal characteristics of logic gates. In this work, a novel thermal network model considering the thermal crosstalk of neighboring devices is proposed, which can accurately calculate the self-heating and thermal crosstalk by introducing a dummy network. The electrical and thermal characteristics of NSFETs and CFETs are compared, and it is found that CFETs suffer more severe self-heating and thermal crosstalk. The electro-thermal characteristics of inverters, logic gates and ring oscillators composed of NSFETs and CFETs are further investigated. Compared with NSFETs, logic gates and ring oscillators composed of CFETs are more seriously affected by self-heating and should be given extra attention. The thermal network model proposed in this work can be further used to study the thermal optimization strategy of devices and circuits to enhance the electrical performances, achieving the design technology co-optimizations (DTCO).
考虑热串扰的nsfet和cfet热网模型及电热耦合研究
随着逻辑集成电路的工艺节点不断缩小以追求摩尔定律,纳米片场效应晶体管(nsfet)和互补场效应晶体管(cfet)成为3nm和亚纳米节点的候选器件。然而,由于器件尺寸的缩小,nsfet和cfet的自热和器件间热串扰变得更加严重,导致导通电流下降,阈值电压偏移,可靠性降低。准确计算器件的自热和热串扰,研究它们对逻辑门的电学和热特性的影响具有重要意义。本文提出了一种考虑相邻器件热串扰的新型热网络模型,该模型通过引入虚拟网络可以准确地计算自热和热串扰。对比了非甾体场效应管和cfet的电学和热特性,发现cfet的自热和热串扰更为严重。进一步研究了由nsfet和cfet组成的逆变器、逻辑门和环形振荡器的电热特性。与非核效场效应管相比,由cfet构成的逻辑门和环振荡器受自热影响更严重,需要特别注意。本文提出的热网络模型可进一步用于研究器件和电路的热优化策略,以提高电性能,实现设计技术协同优化(DTCO)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.50
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