Probing Interfacial Magnetism in Non-Collinear Antiferromagnetic SmFeO3 Single Crystal via Spin Hall Magnetoresistance

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2025-08-26 DOI:10.1021/acsaelm.5c01367

Mingzhu Xue, Shilei Ding, Qixin Li, Wenhao Di, Xiaoxuan Ma, Anhua Wu, Shixun Cao*, Wenyun Yang* and Jinbo Yang,

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Abstract

Effectively detecting the magnetization of antiferromagnetic materials and manipulating antiferromagnetic moments through all-electrical methods remain fundamental challenges. The spin Hall magnetoresistance in noncollinear antiferromagnetic systems present a promising avenue to overcome above obstacles. In this work, SmFeO₃/Pt and SmFeO₃/Cu/Pt heterostructures based on polished SmFeO₃ single crystals were fabricated to probe the interfacial magnetic moment. The inserted Cu layer serves to eliminate magnetic proximity effects for SmFeO₃/Pt interface. The magnetotransport and magnetic measurements in SmFeO₃/Pt heterostructures indicate that both the spin Hall magnetoresistance and the magnetization exhibit a decrease as the temperature drops below 150 K, attributed to the emergence of magnetic ordering in Sm sublattice. The correlation in temperature dependence between the SMR and magnetization indicates that spin Hall magnetoresistance is a sensitive probe for the microscopic magnetic moments at the interfaces of antiferromagnetic insulators/heavy metal. Comparative studies on SmFeO₃/Cu/Pt heterostructures show that inserted Cu layer modifies the magnetic anisotropy of interfacial moments. Furthermore, anomalous Hall effect in SmFeO₃/Pt heterostructures exhibit sign reversal near 80 K, attributed to the competition between magnetic proximity-induced anomalous Hall effect and spin Hall effect-induced anomalous Hall effect. This study introduces the detection of interfacial magnetic moment in SmFeO₃ single crystals via spin transport measurements.

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利用自旋霍尔磁电阻探测非共线反铁磁SmFeO3单晶的界面磁性

通过全电方法有效地检测反铁磁材料的磁化强度和控制反铁磁矩仍然是一个根本性的挑战。非共线反铁磁系统中的自旋霍尔磁电阻为克服上述障碍提供了一条有希望的途径。本文制备了基于抛光SmFeO3单晶的SmFeO3/Pt和SmFeO3/Cu/Pt异质结构来探测界面磁矩。插入的Cu层可以消除SmFeO3/Pt界面的磁邻近效应。SmFeO3/Pt异质结构的磁输运和磁性测量表明，当温度降至150 K以下时，自旋霍尔磁电阻和磁化强度均下降，这是由于Sm亚晶格中出现了磁有序现象。SMR与磁化强度之间的温度相关性表明，自旋霍尔磁电阻是反铁磁绝缘体/重金属界面处微观磁矩的灵敏探头。对SmFeO3/Cu/Pt异质结构的对比研究表明，插入Cu层改变了界面矩的磁各向异性。此外，SmFeO3/Pt异质结构中的反常霍尔效应在80 K附近表现出符号反转，这归因于磁邻近诱导的反常霍尔效应和自旋霍尔效应诱导的反常霍尔效应之间的竞争。本文介绍了SmFeO3单晶中界面磁矩的自旋输运检测方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico