Guanghui Wang, Chao Le, Wipakorn Jevasuwan, Naoki Fukata
{"title":"High-performance SWIR photodetector using vertically-aligned Ge/Si core–shell nanowires","authors":"Guanghui Wang, Chao Le, Wipakorn Jevasuwan, Naoki Fukata","doi":"10.1016/j.jmst.2025.09.002","DOIUrl":null,"url":null,"abstract":"Ge/Si core–shell nanowires (CSNWs) are regarded as strong candidates for next-generation electronic and optoelectronic devices, as they have a structure in which the carrier transport region is isolated from the impurity-doped region by hole gas that has accumulated between the interfaces. In this study, vertically-aligned i-Ge/p-Si CSNWs with different diameters were successfully fabricated using the top-down method, employing electron beam lithography (EBL) combined with chemical vapor deposition (CVD). Raman analysis exhibits hole gas accumulation that is clearly controllable by adjusting the size of the Ge core. A high-performance short-wave infrared (SWIR) photodetector was fabricated using i-Ge/p-Si CSNWs. Even without applied bias voltage, maximum responsivity reached 2.78 A/W under illumination with 1200 nm (near infrared) light. Maximum responsivity reached 16.57 A/W by controlling the hole gas concentration. Our results confirm that hole gas accumulation in i-Ge/p-Si CSNWs enables the fabrication of high-performance SWIR photodetectors.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"20 1","pages":""},"PeriodicalIF":14.3000,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science & Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmst.2025.09.002","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Ge/Si core–shell nanowires (CSNWs) are regarded as strong candidates for next-generation electronic and optoelectronic devices, as they have a structure in which the carrier transport region is isolated from the impurity-doped region by hole gas that has accumulated between the interfaces. In this study, vertically-aligned i-Ge/p-Si CSNWs with different diameters were successfully fabricated using the top-down method, employing electron beam lithography (EBL) combined with chemical vapor deposition (CVD). Raman analysis exhibits hole gas accumulation that is clearly controllable by adjusting the size of the Ge core. A high-performance short-wave infrared (SWIR) photodetector was fabricated using i-Ge/p-Si CSNWs. Even without applied bias voltage, maximum responsivity reached 2.78 A/W under illumination with 1200 nm (near infrared) light. Maximum responsivity reached 16.57 A/W by controlling the hole gas concentration. Our results confirm that hole gas accumulation in i-Ge/p-Si CSNWs enables the fabrication of high-performance SWIR photodetectors.
期刊介绍:
Journal of Materials Science & Technology strives to promote global collaboration in the field of materials science and technology. It primarily publishes original research papers, invited review articles, letters, research notes, and summaries of scientific achievements. The journal covers a wide range of materials science and technology topics, including metallic materials, inorganic nonmetallic materials, and composite materials.