{"title":"Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record Pout = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K","authors":"Haonan Wu;Zetai Liu;Derek Chaw;Yulin He;Milton Feng","doi":"10.1109/LPT.2025.3598825","DOIUrl":null,"url":null,"abstract":"High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula> cavity and <inline-formula> <tex-math>$5.0~\\mu $ </tex-math></inline-formula>m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I<inline-formula> <tex-math>${}_{\\mathrm {th}} =1.54$ </tex-math></inline-formula> mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 23","pages":"1361-1364"},"PeriodicalIF":2.5000,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11124861","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11124861/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-$\lambda $ cavity and $5.0~\mu $ m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I${}_{\mathrm {th}} =1.54$ mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.