{"title":"On-Chip Dielectric Resonator Antenna on Silicon Carbide Substrate for Extreme Environments","authors":"Sree Adinarayana Dasari;Seung Yoon Lee;Nima Ghalichechian","doi":"10.1109/LAWP.2025.3576302","DOIUrl":null,"url":null,"abstract":"We present the design, fabrication, and high-temperature measurement of a highly efficient (91.5%) on-chip dielectric resonator antenna (DRA) on silicon carbide (SiC). The simulations were validated through measurements of return loss and peak gain up to 400 °C, along with radiation pattern measurements up to 300 °C, marking this study as the first high-temperature radiation pattern measurement of a ground-signal-ground (GSG) probed SiC-based on-chip antenna. We report a sapphire resonator coupled to a slot on a 4H-SiC substrate, fed using a grounded coplanar waveguide, and impedance matched by a series stub inductor. The DRA operates in the fundamental TE<sub>111</sub> mode for broadside radiation at 28.8 GHz to 30.6 GHz. We implement edge corrugations, significantly enhancing efficiency by suppressing surface waves and beam shaping to achieve a higher gain. The proposed antenna was fabricated in-house and measured using a modified probe station and a robot arm. The simulated gain and peak total efficiency of 8.52 dBi and 91.5%, respectively, agree with the measured values of 8.47 dBi and 90.5%. The antenna is demonstrated to have a stable reflection coefficient and radiation pattern up to 300 °C with less than 0.5 dBi reduction in peak gain.","PeriodicalId":51059,"journal":{"name":"IEEE Antennas and Wireless Propagation Letters","volume":"24 9","pages":"2879-2883"},"PeriodicalIF":4.8000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Antennas and Wireless Propagation Letters","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/11021631/","RegionNum":2,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We present the design, fabrication, and high-temperature measurement of a highly efficient (91.5%) on-chip dielectric resonator antenna (DRA) on silicon carbide (SiC). The simulations were validated through measurements of return loss and peak gain up to 400 °C, along with radiation pattern measurements up to 300 °C, marking this study as the first high-temperature radiation pattern measurement of a ground-signal-ground (GSG) probed SiC-based on-chip antenna. We report a sapphire resonator coupled to a slot on a 4H-SiC substrate, fed using a grounded coplanar waveguide, and impedance matched by a series stub inductor. The DRA operates in the fundamental TE111 mode for broadside radiation at 28.8 GHz to 30.6 GHz. We implement edge corrugations, significantly enhancing efficiency by suppressing surface waves and beam shaping to achieve a higher gain. The proposed antenna was fabricated in-house and measured using a modified probe station and a robot arm. The simulated gain and peak total efficiency of 8.52 dBi and 91.5%, respectively, agree with the measured values of 8.47 dBi and 90.5%. The antenna is demonstrated to have a stable reflection coefficient and radiation pattern up to 300 °C with less than 0.5 dBi reduction in peak gain.
期刊介绍:
IEEE Antennas and Wireless Propagation Letters (AWP Letters) is devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation. These are areas of competence for the IEEE Antennas and Propagation Society (AP-S). AWPL aims to be one of the "fastest" journals among IEEE publications. This means that for papers that are eventually accepted, it is intended that an author may expect his or her paper to appear in IEEE Xplore, on average, around two months after submission.