The influence of feeding port configurations on the melting and migration of silicon particles in the melt during CCZ monocrystalline silicon growth

Abstract

Based on previously developed LES-DPM model, this study focused on the effects of feeding port configurations on the melting and migration characteristics of silicon particles during continuous Czochralski monocrystalline silicon growth. And the melt temperature distribution, particularly temperature fluctuations in the melt near the crystallization interface were also analyzed. The results show that symmetrical arrangement of multiple feeding ports to disperse the silicon particles can effectively prevent the formation of local low-temperature areas around the feeding ports. However, this arrangement also enlarges the influence area of thermal disturbance near the melt free surface. And excessive dispersion of feeding ports not only fails to significantly shorten particle melting time but also increases the complexity of feeding device. In addition, reducing the distance between feeding port and crucible wall can effectively promote rapid particles melting. Meanwhile, more concentrated particle movement helps improve the uniformity of temperature distribution near the triple point, thereby enhancing the stability of crystal growth. However, this also leads to increased impacts and contacts between silicon particles and crucible wall, shortening the crucible's service life.