Zuber Rasool , S. Intekhab Amin , Dinesh Prasad , Mohd Faizan , Naveen Kumar
{"title":"Implementation of Leaky Integrate and Fire neuron using Trench gate vertical FBFET (TG-V-FBFET) exploiting its steep subthreshold slope","authors":"Zuber Rasool , S. Intekhab Amin , Dinesh Prasad , Mohd Faizan , Naveen Kumar","doi":"10.1016/j.micrna.2025.208311","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (I<sub>on</sub>) of 0.1 mA/μm with overall I<sub>on</sub>/I<sub>off</sub> = 10<sup>10</sup>.Overall on chip area can be reduce up to 66 % compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9 mA and 1.3 V respectively.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208311"},"PeriodicalIF":3.0000,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325002407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (Ion) of 0.1 mA/μm with overall Ion/Ioff = 1010.Overall on chip area can be reduce up to 66 % compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9 mA and 1.3 V respectively.