Growth temperature dependent on the structure, device properties and carrier transport mechanisms of β-Ga2O3/GaAs heterojunctions

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-09-05 DOI:10.1016/j.mseb.2025.118767

Yadan Li , Yahan Wang , Zhichao Chen , Feng Ji , Mi Zhou , Kai Jiang , Jishan Liu , Hai Zhu , Xianghu Wang

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引用次数: 0

Abstract

Ga₂O₃ features a wide bandgap and excellent optoelectronic properties, making it highly valuable for applications in UV photodetectors, high-power electronics, and transparent conductive materials. Ga₂O₃ thin films were grown on Si-doped GaAs (100) substrates using pulsed laser deposition technology, followed by the fabrication of Ga₂O₃_/GaAs heterojunction solar-blind ultraviolet detectors. High-quality thin films have been achieved by optimizing the growth temperature. As the growth temperature increased from 500°C to 700°C, the particles deposited on the substrate are provided with sufficient energy to migrate and nucleate, resulting in improved crystallinity and reduced defects in the film. Additionally, the presence of an oxygen atmosphere during deposition reduced the concentration of oxygen vacancies, which further minimized oxygen-vacancy-related defects. As a result, the detector exhibits a 164-fold increase in external quantum efficiency, a 241-fold enhancement in responsivity, and a 44.5 % improvement in I_photo/I_dark. These findings provide an experimental foundation for the development of high-performance β-Ga₂O₃/GaAs heterojunction solar-blind UV detectors.

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生长温度对β-Ga2O3/GaAs异质结结构、器件性能和载流子输运机制的影响

Ga2O3具有宽带隙和优异的光电性能，在紫外光电探测器、大功率电子器件和透明导电材料中具有很高的应用价值。采用脉冲激光沉积技术在si掺杂的GaAs（100）衬底上生长Ga2O3薄膜，然后制作Ga2O3/GaAs异质结太阳盲紫外探测器。通过优化生长温度，获得了高质量的薄膜。随着生长温度从500℃升高到700℃，沉积在衬底上的颗粒有足够的能量迁移成核，从而提高了薄膜的结晶度，减少了薄膜中的缺陷。此外，在沉积过程中氧气气氛的存在降低了氧空位的浓度，这进一步减少了氧空位相关缺陷。结果表明，该探测器的外量子效率提高了164倍，响应性提高了241倍，Iphoto/Idark提高了44.5%。这些发现为开发高性能的β-Ga2O3/GaAs异质结太阳盲紫外探测器提供了实验基础。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.