Semiconductor-based electromagnetic wave absorption materials: Review and perspectives

Abstract

The diverse charge and band structures of semiconductor materials have necessitated the development of semiconductor-based electromagnetic wave absorption materials (SEMAs). This review provides a comprehensive analysis of the latest advancements in SEMAs of various semiconductor categories, including but not limited to n-type semiconductors, p-type semiconductors, Mott-Schottky heterojunctions, p–n heterojunctions, etc. Furthermore, the review summarizes strategies for optimizing absorption performance through defect engineering, interface engineering, hybrid engineering, topology engineering, and multi-component optimization. It also delves into the intricate relationship between semiconductor structure, electromagnetic properties, and absorption performance. Finally, current challenges and future research directions for SEMAs are proposed, emphasizing the need for the optimization of new structural materials, in-depth exploration of mechanisms, intelligent design and control, practical applications, and industrialization. This review aims to offer new perspectives for the development of next-generation SEMAs, facilitating fundamental breakthroughs in the mechanistic understanding of electromagnetic wave absorption in semiconductors and advancing diverse applications in military stealth, electromagnetic protection, and wireless communication.