Simulation of lateral distribution of resistivity and charge carrier lifetime in chromium-compensated gallium arsenide wafers

IF 0.4 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Russian Physics Journal Pub Date : 2025-07-09 DOI:10.1007/s11182-025-03487-z

A. E. Vinnik, A. N. Zarubin, P. V. Kosmachev, A. D. Lozinskaya, I. D. Chsherbakov, Y. S. Petrova, M. S. Skakunov, O. P. Tolbanov, A. V Tyazhev, L. K. Shaimerdenova, A. V. Shemeryankina

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Abstract

The paper proposes a four-level model which includes deep and shallow acceptors and donors, allowing to predict characteristics for the HR GaAs:Cr material and sensors. It is shown that the best agreement between the simulated values and experimental data of the non-equilibrium charge carrier lifetime, Hall mobility, and resistivity of the HR GaAs:Cr material, is achieved at the EL2 center concentration in the range of (1 to 3)∙10¹⁵ cm^–3, the Cr concentration of about 1∙10¹⁷ cm^–3, and the concentration of thermal acceptors in the range of (1 to 4)∙10¹⁶ cm^–3. It is shown that EL2⁺ and Cr ionized centers are the dominant deep levels that determine the lifetime of respectively non-equilibrium electrons and holes in LEC HR GaAs:Cr.

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铬补偿砷化镓晶圆中电阻率和载流子寿命横向分布的模拟

本文提出了一个四层模型，其中包括深层和浅层受体和供体，允许预测HR GaAs:Cr材料和传感器的特性。结果表明，当EL2中心浓度为(1 ~ 3)∙1015 cm-3、Cr浓度约为1∙1017 cm-3、热受体浓度为(1 ~ 4)∙1016 cm-3时，HR GaAs:Cr材料的非平衡载流子寿命、霍尔迁移率和电阻率的模拟值与实验数据最吻合。结果表明，在LEC - HR GaAs:Cr中，EL2+和Cr离子化中心是决定非平衡电子和空穴寿命的主要深层能级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

208

审稿时长

3-6 weeks

期刊介绍： Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.