Pinbo Huang , Zhiang Liu , Changhao Wang , Ping Huang , Weirui Zhang , Zhen Cui
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引用次数: 0
Abstract
Puckered arsenene exhibits a moderate bandgap, high carrier mobility, and unique anisotropic properties, making it a promising two-dimensional semiconducting material for nanoelectronic applications. In this study, we explored the molecular doping of puckered arsenene with tetracyanoethylene (TCNE) and tetrathiafulvalene (TTF) through first-principles calculations. TCNE acts as an electron acceptor, achieving effective p-type doping with a doping gap of only 0.12 eV. Although TTF initially ineffective due to a large doping gap of 0.70 eV, it becomes an effective n-type dopant under an external electric field. Furthermore, we demonstrate the potential of the TCNE-TTF co-doped puckered arsenene system as a nanogenerator for energy conversion. Theoretical calculations predict an high open-circuit voltage of 2.07 V. This study provides a novel approach for engineering the electronic properties of puckered arsenene and highlights its suitability for nanoelectronics and energy conversion.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.