Analysis of 4H-SiC semi-superjunction structures for low switching losses and fast reverse recovery trench MOS with narrow trench gates and integrated MPS diodes

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-08-28 DOI:10.1016/j.mejo.2025.106853

Mingyang Chen, Quanyuan Feng, Quanyi Zhang, Xiaopei Chen, Yuanchang Zhan

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引用次数: 0

Abstract

To concurrently optimize conduction losses, switching characteristics, and breakdown robustness in SiC power MOSFETs, this work introduces a MPS-SSJ-NTGMOS structure combining semi-superjunction, narrow trench gates, and merged PN Schottky (MPS) diode. The semi-superjunction charge compensation increases drift region doping, achieving a specific on-resistance (R_on,sp) of 4.818 mΩ cm² (50.4 % lower than conventional devices). Narrow trench gates reconfigure electrode coupling paths, reducing gate-drain capacitance (C_gd) by 39.4 % and gate charge (Q_g) by 46.5 %, while improving the C_gd figure of merit by 32.48 %, thus enhancing switching speed and reducing losses. The monolithically integrated MPS diode enables conduction primarily through Schottky paths, reducing reverse recovery charge by 38.5 % with a 0.7 V turn-on voltage. Breakdown voltage increases by 33 %–1634 V, with breakdown voltage FOM (BV-FOM) improved by 69.68 %. Compared to conventional superjunction designs, MPS-SSJ-NTGMOS achieves 50.4 % lower conduction losses and 38.3 % lower switching losses under identical conditions, while demonstrating improved dynamic response.

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低开关损耗和快速反向恢复沟槽MOS的4H-SiC半超结结构分析，窄沟槽栅极和集成MPS二极管

为了同时优化SiC功率mosfet的传导损耗、开关特性和击穿稳健性，本研究引入了一种结合半超结、窄沟槽栅极和合并PN肖特基（MPS）二极管的MPS- ssj - ntgmos结构。半超结电荷补偿增加了漂移区掺杂，实现了4.818 mΩ cm2的比导通电阻（Ron,sp）（比传统器件低50.4%）。窄沟槽栅极重新配置电极耦合路径，使栅极漏极电容（Cgd）降低39.4%，栅极电荷（Qg）降低46.5%，栅极漏极电容优值提高32.48%，从而提高了开关速度，降低了损耗。单片集成MPS二极管主要通过肖特基通道传导，在0.7 V导通电压下减少38.5%的反向恢复电荷。击穿电压提高33% -1634 V，击穿电压FOM （BV-FOM）提高69.68%。与传统的超结设计相比，MPS-SSJ-NTGMOS在相同条件下的传导损耗降低了50.4%，开关损耗降低了38.3%，同时表现出更好的动态响应。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.