Realizing one-dimensional single-crystalline topological nanomaterials through thermomechanical epitaxy

Abstract

Applications and characterizations of topological materials benefit from nanostructures where enhanced surface-to-volume ratios amplify topological states. However, realizing one-dimensional topological nanomaterials has been limited by existing fabrication methods. Here, we present thermomechanical epitaxy (TME)—a general technique for fabricating one-dimensional topological nanomaterials. By applying pressure on bulk topological materials against rigid nanocavities, interface diffusion drives epitaxial growth of high-quality, single-crystalline nanowires at wafer scale. As this diffusional mechanism is prevalent across general materials, it enables a versatile approach to realize one-dimensional nanomaterials from a diverse spectrum of topological phases covering topological insulators and topological semimetals and realize one-dimensional nanomaterials that have not been achieved with state-of-the-art technology. Our theoretical framework predicts materials suitable for TME by correlating phase stability with pressure-induced chemical potential. The proposed method expands the accessible space of topological nanomaterials and bolsters the potential for advancements in physical science and next-generation nanodevices.