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Investigation of sintering effect on photoresponse properties of narrow bandgap Sb2Te3 layers prepared by cost effective wet chemical technique

IF 4.2 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2025-09-02 DOI:10.1016/j.optmat.2025.117469

Maruti V. Salve , Shivaji M. Sonawane , Kalyan B. Chavan , Priyanka U. Londhe , Nandu B. Chaure

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引用次数: 0

Abstract

Thin films of Sb₂Te₃ were prepared by spin-coating a paste of hydrothermally synthesized Sb₂Te₃ onto FTO substrates and subsequently sintering in air at 250 °C and 350 °C. The influence of sintering on the structural, optical, morphological, compositional, electrical, and photoelectric response properties of Sb₂Te₃ thin films was studied. Structural analysis revealed a rhombohedral crystal structure for Sb₂Te₃ thin films, and notably, the crystallinity and crystallite size improved with increasing sintering temperatures. The optical bandgap was modified with sintering temperature from 0.64 to 0.67 eV. The Raman modes for the Sb₂Te₃ phase were observed, and the FWHM of the peaks decreased as the sintering temperature increased, indicating improved crystallinity. As the sintering temperature increased, the films exhibited larger grains and reduced voids owing to coalescence. The Sb₂Te₃ films exhibited a composition close to stoichiometric (Sb:Te = 40:60). The TEM images show that the as-synthesized Sb₂Te₃ powder exhibited nanoplate-like structures with irregular, hexagonal, and triangular faces. HRTEM and SAED patterns demonstrated the single-crystalline nature of the nanoplates. The surface oxidation states of Sb and Te in the Sb₂Te₃ films were examined using XPS. The electrical properties of Sb₂Te₃ films investigated using current-voltage and capacitance-voltage measurements showed improved electrical conductivity, carrier concentration, and flat band potential for the sample sintered at 350 °C. The photoresponse properties, such as responsivity, detectivity, and photocurrent, studied for different light intensities, were found to be improved for the sample sintered at 350 °C. The Sb₂Te₃ films sintered at 250 °C and 350 °C showed rise and decay times of 0.23 and 0.41 s, and 0.21 and 0.37 s, respectively, under a wideband photoresponse (398–1163 nm). These results demonstrate the potential of Sb₂Te₃ films for low-cost photodetector development.

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烧结对低成本湿化学法制备窄禁带Sb2Te3层光响应性能的影响

将水热合成的Sb2Te3膏体自旋涂覆在FTO衬底上，然后在250℃和350℃的空气中烧结，制备了Sb2Te3薄膜。研究了烧结对Sb2Te3薄膜结构、光学、形貌、组成、电学和光电响应性能的影响。结构分析表明，Sb2Te3薄膜呈菱形晶体结构，结晶度和晶粒尺寸随烧结温度的升高而提高。当烧结温度从0.64 eV提高到0.67 eV时，光学带隙得到了改善。观察到Sb2Te3相的拉曼模式，随着烧结温度的升高，峰的FWHM减小，表明结晶度提高。随着烧结温度的升高，薄膜的晶粒变大，由于聚结作用，孔隙减少。Sb2Te3薄膜的组成接近化学计量（Sb:Te = 40:60）。TEM图像表明，合成的Sb2Te3粉体具有不规则面、六边形面和三角形面等纳米片状结构。HRTEM和SAED模式显示了纳米板的单晶性质。用XPS研究了Sb2Te3薄膜中Sb和Te的表面氧化态。利用电流电压和电容电压测量研究了Sb2Te3薄膜的电学性能，结果表明，在350℃下烧结的样品的电导率、载流子浓度和平带电位都有所改善。研究了不同光强下样品的光响应特性，如响应率、探测率和光电流，发现在350°C下烧结的样品得到了改善。在250°C和350°C下烧结的Sb2Te3薄膜在398 ~ 1163 nm的宽带光响应下，上升和衰减时间分别为0.23和0.41 s， 0.21和0.37 s。这些结果证明了Sb2Te3薄膜在低成本光电探测器开发方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Materials

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.

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