Trace-level oxygen doping in organic semiconductors: mechanistic insights and precise modulations

IF 7.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2025-08-08 DOI:10.1007/s40843-025-3530-3

Feiling Yang (, ), Zhongwu Wang (, ), Xiaosong Chen (, ), Guanjie Wang (, ), Sooncheol Kwon, Yinan Huang (, ), Liqiang Li (, ), Wenping Hu (, )

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引用次数: 0

Abstract

有机半导体是一类新型半导体材料, 在可穿戴电子、柔性显示、生物传感等领域具有广阔的应用前景. 有机半导体的聚集态结构由弱范德华力支配, 其性能极易受到外源杂质等非本征因素的影响. 近年来, 有机半导体中杂质来源及其影响机制的研究取得了显著进展. 氧是有机半导体中最常见的外来杂质, 长期被视为电荷陷阱, 导致迁移率下降并影响器件稳定性. 最近的研究报道了氧掺杂在痕量水平上产生截然相反的作用, 即痕量氧掺杂能够显著提高有机电子器件的性能和稳定性. 在未来, 深入理解痕量氧与有机分子体系相互作用机制并发展分子水平的氧掺杂调控策略将为有机固体电荷输运研究提供新见解和强有力的应用技术. 本文阐明了有机半导体中痕量氧掺杂现象的基本原理, 并探讨了最先进的氧掺杂调控技术及其对器件性能和稳定性的影响. 最后, 提出了氧元素掺杂工程的发展框架, 同时概述了其在新兴材料与器件领域中应用的新挑战.

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有机半导体中痕量氧掺杂：机理和精确调制

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来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.