{"title":"Bipolar resistive switching characteristics of silver doped tin sulphide based ReRAM devices","authors":"Neju Mathew Philip, M.C. Santhosh Kumar","doi":"10.1016/j.cap.2025.08.013","DOIUrl":null,"url":null,"abstract":"<div><div>In the present work, silver doped tin sulphide (SnS:Ag) thin films are deposited using the vacuum thermal evaporation over stainless steel (SS 304) substrates. X-ray diffraction studies and Raman analysis confirmed the formation of orthorhombic SnS without any impurity phases. FE-SEM analysis revealed a coral reef-like morphology for the deposited SnS:Ag thin films. EDS studies revealed tin-rich SnS:Ag thin films. The resistive memory switching characteristics of the fabricated SS/SnS:Ag/Ag ReRAM device is analysed and the On/Off ratio of the device is obtained as 40.7. The SS/SnS:Ag/Ag device has good endurance over 100 cycles and retention over 10<sup>4</sup> s. The creation and dissolution of conductive filaments of silver and sulphur ions through the tin vacancies is the possible conduction mechanism behind the memory switching property of the fabricated SS/SnS:Ag/Ag memory device.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 37-42"},"PeriodicalIF":3.1000,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173925001798","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work, silver doped tin sulphide (SnS:Ag) thin films are deposited using the vacuum thermal evaporation over stainless steel (SS 304) substrates. X-ray diffraction studies and Raman analysis confirmed the formation of orthorhombic SnS without any impurity phases. FE-SEM analysis revealed a coral reef-like morphology for the deposited SnS:Ag thin films. EDS studies revealed tin-rich SnS:Ag thin films. The resistive memory switching characteristics of the fabricated SS/SnS:Ag/Ag ReRAM device is analysed and the On/Off ratio of the device is obtained as 40.7. The SS/SnS:Ag/Ag device has good endurance over 100 cycles and retention over 104 s. The creation and dissolution of conductive filaments of silver and sulphur ions through the tin vacancies is the possible conduction mechanism behind the memory switching property of the fabricated SS/SnS:Ag/Ag memory device.
期刊介绍:
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.