A 1.5 GS/s 13-bit partial-interleaving pipelined-SAR ADC with 1/gm load and current-biased ring amplifier

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jingyuan Xu , Kai Sun , Xuan Guo , Wenhao Ren , Fangyuan Xu , Hanbo Jia , Xinyu Liu
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引用次数: 0

Abstract

This article presents a 13-bit 1.5-GS/s ring-amp-based pipelined successive-approximation register (SAR) analog-to-digital converter (ADC) that integrates passive residue transfer and partial interleaving architectures. This architecture achieves high speed while preventing the interleaving skew spurs. The proposed ring amplifier (ring-amp) achieves high speed and strong PVT robustness by adopting a 1/gm load combined with current biasing, which pushes the non-dominant pole to a higher frequency and stabilizes both the gain–bandwidth product (GBW) and phase margin (PM). To verify its performance, the proposed ADC was implemented using a 28-nm CMOS process, and post-layout simulation results show that it achieves an SNDR of 64.35 dB and an SFDR of 82.72 dB near Nyquist input. The ADC consumes 13.25 mW at 1.5 GS/s, achieving a Walden figure of merit (FoM) of 6.55 fJ/conversion-step.
具有1/gm负载和电流偏置环形放大器的1.5 GS/s 13位部分交错流水线sar ADC
本文提出了一种13位1.5 gs /s环安培的流水线逐次逼近寄存器(SAR)模数转换器(ADC),它集成了无源残留传输和部分交错架构。该结构实现了高速,同时防止了交错的斜杂散。提出的环形放大器(ring-amp)采用1/gm负载和电流偏置,将非主导极推至更高频率,稳定增益带宽积(GBW)和相位裕度(PM),实现高速和强PVT鲁棒性。为了验证其性能,采用28纳米CMOS工艺实现了该ADC,布局后仿真结果表明,该ADC在Nyquist输入附近的SNDR为64.35 dB, SFDR为82.72 dB。ADC在1.5 GS/s时功耗为13.25 mW,实现了6.55 fJ/转换步长的瓦尔登特性值(FoM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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