Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu
{"title":"Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform","authors":"Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu","doi":"10.1063/5.0281033","DOIUrl":null,"url":null,"abstract":"A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"22 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0281033","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.