Facile fabrication of reduced graphene oxide/boron nitride hybrid films as supercapacitor electrodes with enhanced areal capacitance

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-08-29 DOI:10.1016/j.mseb.2025.118746

Xiangxiang Du, Yadan Ran, Xuejun Shi, Kesheng Cao, Yongjun Han

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Abstract

The reduced graphene oxide/boron nitride (RGO/BN) hybrid film materials were prepared via ultrasonic blending, followed by the vacuum filtration film-forming and chemical reduction process. The fabricated free-standing RGO/BN hybrid films could combine the advantages of highly conductive RGO and pseudocapacitive BN. Notably, the optimized 1:1 RGO/BN hybrid film electrode delivered an areal capacitance of 513.4 mF cm⁻² at 1 mA cm⁻², which was four times larger than that of RGO film. The introduction of BN drastically improved the areal capacitance and also demonstrated excellent capacitance retention. Furthermore, a symmetric supercapacitors device was constructed using the 1:1 RGO/BN hybrid film as two symmetrical electrodes. An areal energy density of 6.8 µWh cm⁻² was attained at a power density of 800 µW cm⁻². This development opens avenues for the facile manufacturing of hybrid film as high-performance energy storage materials.

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还原氧化石墨烯/氮化硼杂化膜作为增强面电容超级电容器电极的简易制备

采用超声共混法制备了还原性氧化石墨烯/氮化硼（RGO/BN）杂化膜材料，然后进行真空过滤成膜和化学还原。制备的独立RGO/BN杂化膜结合了高导电性RGO和伪电容性BN的优点。值得注意的是，优化后的1:1 RGO/BN杂化膜电极在1ma cm−2时的面电容为513.4 mF cm−2，是RGO膜的4倍。BN的引入大大提高了面电容，并表现出良好的电容保持能力。此外，采用1:1 RGO/BN杂化膜作为对称电极，构建了对称超级电容器器件。当功率密度为800µW cm - 2时，面能密度为6.8µWh cm - 2。这一发展为制造高性能储能材料的混合薄膜开辟了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.