Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-08-28 DOI:10.1007/s10825-025-02398-z

Valmir Ganiu, Dirk Schulz

引用次数: 0

Abstract

As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative \(L^\infty\) error that is \(40\;\)% lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.

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利用多波段不连续伽辽金方法模拟纳米器件中的高效量子输运

随着人们对先进纳米器件的兴趣日益浓厚，在分析输运现象时，考虑带间耦合效应对于获得准确和有物理意义的结果至关重要。本研究提出了一种将多波段包络函数模型与不连续伽辽金方法相结合的新方法，从而产生了一种适合于模拟带间动力学的高效算法。我们的方法实现了相对\(L^\infty\)误差，即 \(40\;\)% lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.