{"title":"Ultrathin epitaxial aluminum oxide film on 4H-SiC(0001) surface","authors":"Anton Visikovskiy , Shotaro Oie , Takushi Iimori , Tetsuroh Shirasawa , Fumio Komori , Satoru Tanaka","doi":"10.1016/j.susc.2025.122834","DOIUrl":null,"url":null,"abstract":"<div><div>The oxide/SiC interface is important for devices based on SiC. The major concern for application is electron scattering due to the large amount of interface defects. Here we report an epitaxially grown ultrathin aluminum oxide film on 4H-SiC(0001) by co-annealing an Al<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> ceramic plate and a 4H-SiC(0001) substrate in hydrogen atmosphere. The result is (<span><math><mrow><mn>3</mn><msqrt><mrow><mn>3</mn></mrow></msqrt><mo>×</mo><mn>3</mn><msqrt><mrow><mn>3</mn></mrow></msqrt></mrow></math></span>)R<span><math><mrow><mn>30</mn><mo>°</mo></mrow></math></span> surface capping structure, which remains stable after exposure to air. This ultrathin oxide exhibits a band gap of <span><math><mrow><mo>∼</mo><mn>6</mn><mspace></mspace><mi>eV</mi></mrow></math></span>. The structural information inferred from X-ray photoemission spectroscopy and x-ray crystal truncation rod scattering suggests that there are almost no dangling bonds in the film and at the interface.</div></div>","PeriodicalId":22100,"journal":{"name":"Surface Science","volume":"762 ","pages":"Article 122834"},"PeriodicalIF":1.8000,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0039602825001414","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The oxide/SiC interface is important for devices based on SiC. The major concern for application is electron scattering due to the large amount of interface defects. Here we report an epitaxially grown ultrathin aluminum oxide film on 4H-SiC(0001) by co-annealing an AlO ceramic plate and a 4H-SiC(0001) substrate in hydrogen atmosphere. The result is ()R surface capping structure, which remains stable after exposure to air. This ultrathin oxide exhibits a band gap of . The structural information inferred from X-ray photoemission spectroscopy and x-ray crystal truncation rod scattering suggests that there are almost no dangling bonds in the film and at the interface.
期刊介绍:
Surface Science is devoted to elucidating the fundamental aspects of chemistry and physics occurring at a wide range of surfaces and interfaces and to disseminating this knowledge fast. The journal welcomes a broad spectrum of topics, including but not limited to:
• model systems (e.g. in Ultra High Vacuum) under well-controlled reactive conditions
• nanoscale science and engineering, including manipulation of matter at the atomic/molecular scale and assembly phenomena
• reactivity of surfaces as related to various applied areas including heterogeneous catalysis, chemistry at electrified interfaces, and semiconductors functionalization
• phenomena at interfaces relevant to energy storage and conversion, and fuels production and utilization
• surface reactivity for environmental protection and pollution remediation
• interactions at surfaces of soft matter, including polymers and biomaterials.
Both experimental and theoretical work, including modeling, is within the scope of the journal. Work published in Surface Science reaches a wide readership, from chemistry and physics to biology and materials science and engineering, providing an excellent forum for cross-fertilization of ideas and broad dissemination of scientific discoveries.