Nanoscale Magnetic Tunnel Junctions Fabricated Using Etching-Back Technique

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Magnetics Pub Date : 2025-07-04 DOI:10.1109/TMAG.2025.3585890

Yawen Luo;Shuhui Liu;Renjuan Luo;Wei Tang;Bin Fang;Zhongming Zeng;Yan Zhou

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引用次数: 0

Abstract

Magnetic tunnel junctions (MTJs) have gained significant attention due to their versatile applications in next-generation information storage, high-sensitivity sensors, and neuromorphic computing systems. The precise and high-quality fabrication of MTJ devices in laboratory settings is crucial for driving advancements in MTJ research. This study introduces a high-precision, cost-effective, and efficient fabrication method for nanoscale MTJ devices by integrating metal hard mask etching (etch-back) with conventional lithography techniques. This approach enables the production of devices with nanopillar dimensions as small as 100 nm, achieving a remarkable 100% yield. The fabricated devices demonstrate outstanding performance metrics, including a resistance–area (RA) product of

$23~\Omega \cdot \mu $

m2, a tunneling magnetoresistance (TMR) ratio of 110%, reliable spin-transfer torque (STT)-induced switching behavior, and a robust spin-torque diode effect. This work offers a practical and scalable pathway for the cost-effective laboratory fabrication of nanoscale MTJ devices, paving the way for further advancements in spintronic technologies.

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用蚀刻背切技术制备纳米磁性隧道结

磁隧道结（MTJs）由于其在下一代信息存储、高灵敏度传感器和神经形态计算系统中的广泛应用而受到了广泛的关注。在实验室环境中精确和高质量地制造MTJ器件对于推动MTJ研究的进步至关重要。本研究将金属硬掩膜蚀刻（蚀刻背）与传统光刻技术相结合，提出了一种高精度、经济高效的纳米MTJ器件制造方法。这种方法可以生产纳米柱尺寸小到100纳米的器件，达到了令人瞩目的100纳米% yield. The fabricated devices demonstrate outstanding performance metrics, including a resistance–area (RA) product of $23~\Omega \cdot \mu $ m2, a tunneling magnetoresistance (TMR) ratio of 110%, reliable spin-transfer torque (STT)-induced switching behavior, and a robust spin-torque diode effect. This work offers a practical and scalable pathway for the cost-effective laboratory fabrication of nanoscale MTJ devices, paving the way for further advancements in spintronic technologies.

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来源期刊

IEEE Transactions on Magnetics 工程技术-工程：电子与电气

CiteScore

4.00

自引率

14.30%

发文量

565

审稿时长

4.1 months

期刊介绍： Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.