Investigation of In2O3: Zn NO2 gas sensors with nanoimprinted nanorod array and gold-black nanoparticles

IF 8.7 Q1 CHEMISTRY, PHYSICAL

Applied Surface Science Advances Pub Date : 2025-08-27 DOI:10.1016/j.apsadv.2025.100833

Mu-Ju Wu , Ting-Zhong Yan , Yu-Heng Hung , Chun-Hung Lin , Hsin-Ying Lee , Ching-Ting Lee

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Abstract

In this study, to develop nitrogen dioxide (NO₂) gas sensors with high response, high selectivity, and low operating temperature, indium oxide (In₂O₃) sensing membranes prepared using a magnetron radio frequency (RF) sputtering system and annealed in a hydrogen atmosphere at various temperatures were initially investigated. X-ray photoelectron spectroscopy analysis revealed that more oxygen vacancies were found in the In₂O₃ films annealed at 400 °C for 10 min, indicating more gas adsorption sites were in the sensing membranes. Zn-doped In₂O₃ (In₂O₃:Zn) sensing membranes were created using a magnetron RF co-sputtering system with various RF powers for the ZnO target. The NO₂ gas sensors using In₂O₃:Zn sensing membranes with a Zn content of 5.4 at.% exhibited a response of 66.0 under 10-ppm NO₂ concentration. Additionally, the In₂O₃:Zn sensing membranes were deposited on various periodic nanoimprinted nanorod array patterns. The response of NO₂ gas sensors using In₂O₃:Zn sensing membranes with a Zn content of 5.4 at.% deposited on a 400-nm-periodic nanoimprinted nanorod array was 94.4 under 10-ppm NO₂ concentration. Finally, p-type gold-black nanoparticles (NPs) were decorated on the In₂O₃:Zn sensing membranes to form p-n heterojunctions. The NO₂ gas sensors using gold-black NPs/In₂O₃:Zn sensing membranes with Zn content of 5.4 at.% and gold content of 1.1 at.% demonstrated optimal sensing performance. Under a NO₂ concentration of 10 ppm, the gas sensors achieved a maximum response of 141.5 at an operating temperature of 115 °C. Moreover, the NO₂ gas sensor could detect concentrations as low as 0.1 ppm and exhibited high selectivity towards NO₂ gas.

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纳米印迹纳米棒阵列和金-黑纳米颗粒In2O3: Zn NO2气体传感器的研究

为了开发具有高响应、高选择性和低工作温度的二氧化氮（NO2）气体传感器，本研究采用磁控射频（RF）溅射系统制备氧化铟（In2O3）传感膜，并在不同温度下在氢气气氛中退火。x射线光电子能谱分析表明，在400℃退火10 min的In2O3薄膜中发现了更多的氧空位，表明在传感膜中有更多的气体吸附位点。采用不同射频功率的磁控射频共溅射系统制备了ZnO掺杂In2O3 （In2O3:Zn）传感膜。NO2气体传感器采用Zn含量为5.4 at的In2O3:Zn传感膜。在NO2浓度为10 ppm时，%的响应为66.0。此外，In2O3:Zn传感膜被沉积在不同的周期性纳米印迹纳米棒阵列上。采用Zn含量为5.4 at的In2O3:Zn传感膜对NO2气体传感器的响应。当NO2浓度为10 ppm时，400 nm周期印迹纳米棒阵列的沉积率为94.4。最后，将p型金黑纳米粒子（NPs）修饰在In2O3:Zn传感膜上，形成p-n异质结。NO2气体传感器采用Zn含量为5.4 at的金黑色NPs/In2O3:Zn传感膜。%，含金量1.1 at。%表现出最佳的传感性能。当NO2浓度为10 ppm时，在115°C的工作温度下，气体传感器的最大响应为141.5。此外，NO2气体传感器可以检测低至0.1 ppm的浓度，并对NO2气体表现出高选择性。

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