Electronic properties of neutron-irradiated hexagonal boron nitride measured by terahertz magneto-optical experiment

IF 3.4 3区 物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION
Ali Farooq , Wen Xu , Zhu Wang , Xingjia Cheng , Altayeb Alshiply Abdalfrag Hamdalnile , Lelin Liu , Gaokui He , Francois M. Peeters
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Abstract

Hexagonal boron nitride (hBN) has been proposed as an ideal material for solid-state neutron detector because of its exceptional and phenomenal physical properties such as having a large neutron scattering cross-section. Here we employ the terahertz time-domain spectroscopy to study the magneto-optical (MO) properties of neutron-irradiated pyrolytic boron nitride in magnetic field regime from 0 to 8T at a fixed temperature of 80 K. Applying the optical polarization tests in the Faraday geometry, we measure the real and imaginary parts of the left- and right-handed circularly polarized dynamic dielectric function ±(ω) and MO conductivities σ±ω for hBN samples irradiated by neutrons with different fluences. By fitting our experimental results with the theoretical formulas for ±(ω) and σ±ω of an electronic gas, we can determine magneto-optically the basic electronic parameters of neutron-irradiated hBN such as the static dielectric constant εb, the carrier density n, the carrier relaxation time τ, the photon-induced electronic localization factor α, and the effective carrier mass m. The effects of neutron irradiation and the magnetic field B on these parameters are examined and analyzed. We find that the MO conductivities for neutron-irradiated hBN can be reproduced by the MO Drude-Smith formula. We show that the presence of a B-field can result in larger εb and τ, smaller n and α, and heavier m. The outcomes of this study can provide valuable insights into the basic electronic and optoelectronic properties of neutron-irradiated hBN.
用太赫兹磁光实验测量中子辐照六方氮化硼的电子特性
六方氮化硼(hBN)由于具有较大的中子散射截面等特殊的物理性质,被认为是固体中子探测器的理想材料。本文采用太赫兹时域光谱研究了中子辐照热解氮化硼在80k的固定温度下,在0 ~ 8T磁场范围内的磁光性质。利用法拉第几何中的光偏振测试,测量了不同影响的中子辐照下hBN样品的左、右手圆极化动态介电函数的实部和虚部的±(ω)和MO电导率σ±ω。将实验结果拟合为电子气体的理论公式(±(ω)和σ±ω),我们可以磁光地确定中子辐照hBN的基本电子参数,如静态介电常数εb、载流子密度n、载流子弛豫时间τ、光子诱导的电子局部化因子α和有效载流子质量m∗。考察和分析了中子辐照和磁场B对这些参数的影响。我们发现中子辐照hBN的MO电导率可以用MO Drude-Smith公式再现。我们证明了b场的存在会导致εb和τ变大,n和α变小,m *变大。本研究的结果可以为中子辐照hBN的基本电子和光电子特性提供有价值的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.70
自引率
12.10%
发文量
400
审稿时长
67 days
期刊介绍: The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.
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