Effect of heat treatment process on the preparation of zirconia whiskers using KCl/NaVO3 molten salt

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-08-25 DOI:10.1016/j.jcrysgro.2025.128319

Quan Zhang , Junxiong Zhang , Feng Jiang , Guo Feng , Jianmin Liu , Jian Liang , Hua Li , Qing Hu

引用次数: 0

Abstract

The zirconia whisker was prepared using the molten salt method with KCl/NaVO₃ as the molten salt. The study focused on the effect of heat treatment on the morphology and phase of the zirconia whiskers. The results reveal that the morphology of zirconia crystals can be controlled by adjusting the process parameters of heat treatment. Specifically, when the heat treatment temperature is 950 °C, the heating rate is 3 °C/min, and the holding time is 5 h, a whisker with a length-to-diameter ratio of 100 can be produced. Excessively high or low temperatures, rapid heating rates, short holding times, and large supercooling degrees can affect the crystal growth of the molten salt. This study provides a new approach for regulating crystal growth in molten salt systems through heat treatment parameters.

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热处理工艺对KCl/NaVO3熔盐制备氧化锆晶须的影响

以KCl/NaVO3为熔盐，采用熔盐法制备氧化锆晶须。研究了热处理对氧化锆晶须形貌和物相的影响。结果表明，通过调整热处理工艺参数可以控制氧化锆晶体的形貌。具体而言，当热处理温度为950℃，升温速率为3℃/min，保温时间为5 h时，可制得长径比为100的晶须。过高或过低的温度、快速的加热速率、较短的保温时间和较大的过冷度都会影响熔盐的结晶生长。本研究为通过热处理参数调节熔盐体系晶体生长提供了新的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.