A Universal Method for Achieving Ultra-Low Contact Resistances in Organic Electrochemical Transistors

IF 4.4 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Luis-Abraham Lozano-Hernández, Patrice Rannou, Yvan Bonnassieux, Sébastien Sanaur
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Abstract

Organic ElectroChemical Transistors (OECTs) are intensively studied for enabling their use in organic bioelectronics, neuromorphic systems, and biosensors. Beyond device geometry, reaching optimal operation of organic electronic circuits requires the optimization of the physico-chemical properties of the channel. Toward this end, the effects of a “bulk” doping of the channel material and its influence on the contact resistance (RC) at the interface between a Polymeric Mixed Ionic-Electronic conductors (PMIECs) and the Source (S) and Drain (D) electrodes are presented. An easy-to-implement method to achieve ultra-low contact resistances in OECTs is introduced. By incorporation of LiTFSI, a 4x transconductance improvement is achieved, and a decrease of RC by a factor of ≈2 and ≈40 has been observed for p-type or n-type PMIECs, respectively. It reaches an unprecedented width-normalized contact resistance value as low as 1 Ohm.cm with the p(g2T-T) polymer. The formation of very localized domains in the polymeric matrix in the vicinity of the electrodes, as a result of the reduction of TFSIˉ anions, which modulates the energy barrier at the S/D interface, is suggested here. Furthermore, both p(g2T-T) and p(gNDI-gT2) polymers exhibit low water uptake with minute amounts of LiTFSI. Worth noticing, doped p(g2T-T) preserves its volumetric capacitance and demonstrates an exceptional long-term stability. Finally, a universal strategy to fine-tune OECT performances, drawing prospects for implementing next-generation applications in organic bioelectronics and neuromorphics, is proposed.

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实现有机电化学晶体管超低接触电阻的通用方法
有机电化学晶体管(OECTs)在有机生物电子学、神经形态系统和生物传感器中的应用得到了广泛的研究。除了器件几何之外,达到有机电子电路的最佳操作需要优化通道的物理化学性质。为此,提出了通道材料“体”掺杂的影响及其对聚合物混合离子-电子导体(PMIECs)与源极(S)和漏极(D)之间界面接触电阻(RC)的影响。介绍了一种实现超低接触电阻的简单方法。通过加入LiTFSI,实现了4倍的跨导改善,并且在p型或n型pmiec中分别观察到RC降低了≈2和≈40。它达到了前所未有的宽度归一化接触电阻值低至1欧姆。p(g2T-T)聚合物。本文认为,在电极附近的聚合物基体中,由于TFSI离子的还原,形成了非常局部的结构域,从而调节了S/D界面上的能垒。此外,p(g2T-T)和p(gNDI-gT2)聚合物在少量LiTFSI下均表现出低吸水率。值得注意的是,掺杂p(g2T-T)保留了其体积电容,并表现出优异的长期稳定性。最后,提出了一种微调OECT性能的通用策略,并展望了在有机生物电子学和神经形态学中实现下一代应用的前景。
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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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