Growth, static and dynamic magnetic properties of cobalt thin films

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ahmed Kharmouche
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引用次数: 0

Abstract

A series of Co thin films with various thicknesses ranging from 50 to 400 nm has been fabricated using thermal heating under vacuum. The impact of the magnetic layer thickness on the magnetocrystalline anisotropy of the films is studied. The alternating gradient field magnetometer, and the atomic force microscopy, as well as the Brillouin light scattering tools have been used to carry out the static and the dynamic properties of these films. The films are principally c-axis oriented. MFM observations exhibit stripe domain patterns. The magnetization easy axis was found to lie in the film plane, the measured spontaneous magnetization being 1410 emu/cm3. We measured and computed the effective magnetocrystalline factors. Enhanced constant anisotropy values are found. Values of Ku up to 8.40 × 106 erg/cm3 have been measured. These values have been found to decrease with the increase of the thickness layer.

Abstract Image

钴薄膜的生长、静态和动态磁性能
采用真空加热法制备了50 ~ 400nm不同厚度的Co薄膜。研究了磁层厚度对薄膜磁晶各向异性的影响。利用交变梯度场磁强计、原子力显微镜以及布里渊光散射工具对这些薄膜的静态和动态特性进行了研究。这些薄膜主要是c轴取向的。MFM观测显示条形域模式。磁化易轴位于膜平面内,测得的自发磁化强度为1410 emu/cm3。我们测量并计算了有效磁晶因子。发现了增强的恒定各向异性值。测得的Ku值高达8.40 × 106 erg/cm3。这些值随着层厚的增加而减小。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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