Black GeSn on Silicon for Enhanced Short-Wave Infrared Detection and Imaging (Adv. Mater. Technol. 16/2025)

IF 6.4 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Materials Technologies Pub Date : 2025-08-22 DOI:10.1002/admt.70224

Po-Rei Huang, Yue-Tong Jheng, Ting-Yu Chen, Guo-En Chang

引用次数: 0

Abstract

Short-Wave Infrared Photodetectors

In article number 2401524, Guo-En Chang and co-workers present an innovative complementary metal-oxide semiconductor (CMOS)-compatible shortwave infrared photodetectors and images based on all-group-IV black GeSn surfaces on Si. The blackening of the GeSn surface achieves a substantial reduction of reflection loss and carrier multiplication, which substantially boosts the detectivity, enhances the wide-angle SWIR photodetection, and improves the quality of the resultant images.

Abstract Image

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用于增强短波红外探测与成像的硅基黑色GeSn。抛光工艺。16/2025)

短波红外探测器在文章编号2401524中，张国恩及其同事提出了一种基于Si上全族iv黑色GeSn表面的新型互补金属氧化物半导体（CMOS）兼容短波红外探测器和图像。GeSn表面的黑化大大减少了反射损耗和载流子倍增，从而大大提高了探测率，增强了广角SWIR光探测能力，提高了所得图像的质量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Materials Technologies Materials Science-General Materials Science

CiteScore

10.20

自引率

4.40%

发文量

566

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