{"title":"RaPC: Raw Bit Error Rate Aware Polar Coding for 3-D nand Flash Memory","authors":"Ruifeng Tu;Meng Zhang;Changsheng Xie;Fei Wu","doi":"10.1109/TCAD.2025.3540375","DOIUrl":null,"url":null,"abstract":"Reliability challenges like random telegraph noise (RTN) and intercell electrostatic interference have gotten worse as feature sizes in planar<sc>nand</small> flash memory continue to reduce. In order to improve storage capacity, 3-D stacking of<sc>nand</small> flash memory has emerged as the preferred development path. However, additional challenges are brought about by the switch to 3-D<sc>nand</small> flash, such as shorter lifespans and lower reliability as a result of higher integration densities and intricate vertical interference. This article proposes RaPC: a raw bit error rate (RBER) aware polar coding scheme for improving data reliability of 3-D<sc>nand</small> flash memory. According to the variation of the RBER, the error correction ability of the polar code is dynamically adjusted to correct bit errors, which ensures the reliability and reduces the decoding delay. Simulation results demonstrate that RaPC offers significant advantages in decoding latency and performance over conventional low-density parity-check (LDPC) codes within specific RBER ranges, making it a promising solution for enhancing the reliability of 3-D<sc>nand</small> flash memory.","PeriodicalId":13251,"journal":{"name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","volume":"44 9","pages":"3546-3559"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10879068/","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
Reliability challenges like random telegraph noise (RTN) and intercell electrostatic interference have gotten worse as feature sizes in planarnand flash memory continue to reduce. In order to improve storage capacity, 3-D stacking ofnand flash memory has emerged as the preferred development path. However, additional challenges are brought about by the switch to 3-Dnand flash, such as shorter lifespans and lower reliability as a result of higher integration densities and intricate vertical interference. This article proposes RaPC: a raw bit error rate (RBER) aware polar coding scheme for improving data reliability of 3-Dnand flash memory. According to the variation of the RBER, the error correction ability of the polar code is dynamically adjusted to correct bit errors, which ensures the reliability and reduces the decoding delay. Simulation results demonstrate that RaPC offers significant advantages in decoding latency and performance over conventional low-density parity-check (LDPC) codes within specific RBER ranges, making it a promising solution for enhancing the reliability of 3-Dnand flash memory.
期刊介绍:
The purpose of this Transactions is to publish papers of interest to individuals in the area of computer-aided design of integrated circuits and systems composed of analog, digital, mixed-signal, optical, or microwave components. The aids include methods, models, algorithms, and man-machine interfaces for system-level, physical and logical design including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, hardware-software co-design and documentation of integrated circuit and system designs of all complexities. Design tools and techniques for evaluating and designing integrated circuits and systems for metrics such as performance, power, reliability, testability, and security are a focus.