Strain-engineered optical gain in GaAs0.4Sb0.6/InP0.9Sb0.1 type-II heterostructures for near-infrared nano-optoelectronics

IF 4.6 2区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Results in Physics Pub Date : 2025-08-18 DOI:10.1016/j.rinp.2025.108401

Amit Rathi , Priya Chaudhary , Amit Kumar Goyal

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引用次数: 0

Abstract

This study investigates the enhancement of optical gain in type-II GaAs_0.4Sb_0.6/InP_0.6Sb_0.1 nanoscale heterostructures under externally applied uniaxial strain for potential applications in near-infrared optoelectronic devices. Using the 6 × 6 Luttinger-Kohn model within the k·p perturbation framework, we analyze the band structure, envelope wavefunctions, and transition matrix elements at 300 K. Without strain, an optical gain of 13,631 cm⁻¹ is observed at an injected carrier concentration of 5 × 10¹² cm⁻². Applying external strain (2, 4, and 6 GPa) along the [100] and [001] crystallographic directions significantly enhance the optical gain within the infrared spectral range. Temperature- and strain-dependent gain simulations in x-polarization further confirm the heterostructure’s efficacy in supporting near-infrared emission. These results highlight the potential of the GaAsSb/InPSb heterostructure as a promising candidate for strain-tunable, high-performance nano-optoelectronic and laser applications.

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近红外纳米光电器件中GaAs0.4Sb0.6/InP0.9Sb0.1型异质结构的应变工程光学增益

本研究研究了在单轴应变作用下增强ii型GaAs0.4Sb0.6/InP0.6Sb0.1纳米异质结构的光学增益，在近红外光电器件中具有潜在的应用前景。利用k·p摄动框架下的6 × 6 Luttinger-Kohn模型，分析了300 k下的带结构、包络波函数和跃迁矩阵元素。在没有应变的情况下，当注入载流子浓度为5 × 1012 cm−2时，光学增益为13631 cm−1。在晶体学方向[100]和[001]上施加2、4和6 GPa的外应变显著提高了红外光谱范围内的光学增益。x偏振中温度和应变相关的增益模拟进一步证实了异质结构支持近红外发射的有效性。这些结果突出了GaAsSb/InPSb异质结构作为应变可调、高性能纳米光电和激光应用的有希望的候选者的潜力。

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来源期刊

Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY

CiteScore

8.70

自引率

9.40%

发文量

754

审稿时长

50 days

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