A Novel hetero-metal gate-all-around TFET biosensors based on polarization effect

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-08-19 DOI:10.1016/j.mejo.2025.106850

Jialin Liang , Zhen Dou , Yunhe Guan , Jiachen Lu , Weihan Sun , Shaoqing Wang , Qin Lu , Xiangtai Liu , Haifeng Chen , Feng Liang

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Abstract

This paper proposes a dielectric-modulated hetero-metal gate-all-around TFET biosensor based on polarization effects for label-free detection of biomolecules. Using calibrated TCAD simulation, we investigate the sensor's ability to detect both neutral and charged biomolecules. The results indicate that, when detecting gelatin biomolecules (with a relative dielectric constant of 12), the biosensor demonstrates a drain current sensitivity approaching 10¹¹, markedly outperforming currently reported TFET-based biosensing technologies. Additionally, the effects of the relative positioning of the hetero-gate and sensing nanocavity, as well as the length of the sensing nanocavity are also analyzed. The results show that biosensor's performance is optimized when the tunneling gate is precisely aligned with the nanocavity, and increasing the nanocavity length can enhance the biosensor's sensitivity. Furthermore, our study suggests that, in addition to achieving a low SS, a noticeable difference in turn-on voltages between pre- and post-detection is also crucial to further improve sensitivity by maximizing the benefits of a low subthreshold swing.

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一种基于极化效应的新型异质金属栅极全能TFET生物传感器

本文提出了一种基于极化效应的介电调制异质金属栅极晶体管生物传感器，用于生物分子的无标记检测。使用校准的TCAD模拟，我们研究了传感器检测中性和带电生物分子的能力。结果表明，当检测明胶生物分子（相对介电常数为12）时，该生物传感器的漏极电流灵敏度接近1011，明显优于目前报道的基于tfet的生物传感技术。此外，还分析了异质栅极与传感纳米腔的相对位置以及传感纳米腔长度的影响。结果表明，当隧道栅与纳米腔精确对准时，生物传感器的性能得到优化，增加纳米腔长度可以提高生物传感器的灵敏度。此外，我们的研究表明，除了实现低SS外，检测前后导通电压的显着差异对于通过最大化低亚阈值摆幅的好处来进一步提高灵敏度也至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.