Ultrathin (<10 nm) Electrochemical Random-Access Memory that Overcomes the Tradeoff between Robust Weight Update and Speed in Neuromorphic Systems

Abstract

Electrochemical Memory Device

The image representing article number 2500416 by Jiyong Woo and co-workers showcases an ultrathin electrochemical memory device. By introducing an AlO_x liner, the device exhibits highly linear and symmetric current modulation along with fast and robust operation. This combination of features makes it a promising synaptic unit for next-generation neuromorphic computing systems.