Magnetic properties of Au-doped YBCO superconductors studied by low field AC susceptibility

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Terzioglu, Y. Kalkan, A. Varilci, Ö. Öztürk, C. Terzioglu
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Abstract

We have reported a detailed study that investigates the grain boundary and the inter-granular effects on the AC susceptibilities of Au-doped YBCO superconductor as a function of temperature and doping fraction. The microstructure is obtained from scanning electron microscopy, while for the elemental analysis, we have used energy dispersive X-ray fluorescence. AC susceptibility is measured as a function of temperature in the range (40–100) K at different AC magnetic field amplitudes between 159 and 796 A/m at 500 Hz for magnetic properties. From the ac susceptibility measurements, we have studied the diamagnetic shielding behavior of AuyYBa2Cu3O7-x samples with y = 0, 1, 5, and 20 wt. %. We have also studied the normalized relation between the imaginary and the real parts of the susceptibility (Cole–Cole plot) for all the samples. We have analyzed our Tp vs. Hac data with the Müller critical state model and χ″ vs. Hac data with the Bean state model. From these analyses, the volume fraction of grains and pinning forces is estimated. The Bean state model was found to explain our experimental findings satisfactorily.

Abstract Image

用低场交流磁化率研究掺金YBCO超导体的磁性
我们报道了一项详细的研究,研究了温度和掺杂分数对au掺杂YBCO超导体交流磁化率的晶界和晶间效应。微观结构由扫描电子显微镜获得,元素分析采用能量色散x射线荧光。交流磁化率是作为温度在(40-100)K范围内的函数来测量的,不同的交流磁场振幅在159和796 a /m之间,500 Hz。通过交流磁化率测量,我们研究了y = 0、1、5和20 wt %的AuyYBa2Cu3O7-x样品的抗磁屏蔽行为。我们还研究了所有样品的磁化率虚部和实部之间的归一化关系(Cole-Cole图)。我们用m ller临界状态模型分析了Tp与Hac数据,用Bean状态模型分析了χ″与Hac数据。根据这些分析,估计了颗粒的体积分数和钉住力。发现Bean状态模型可以很好地解释我们的实验结果。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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