Enhanced microwave dielectric properties of Co1.1Zn0.9-xBaxTiO4 ceramics via Ba2+ ion substitution

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-08-18 DOI:10.1007/s10854-025-15450-2

Xiaofei Shi, Xi Wang, Lei Wang, Xiaoli Tang, Hua Su, Song Lizhong

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引用次数: 0

Abstract

This study modified the Co_1.1Zn_0.9TiO₄ ceramic system through Ba²⁺ ion doping to enhance the quality factor (Q×f) and adjust the τ_f value. Ceramic samples were prepared via the solid-state reaction method at sintering temperatures of 1125–1200°C. XRD revealed that at low Ba doping concentrations (x = 0–0.01), Ba²⁺ could partially substitute Zn²⁺, maintaining the cubic spinel main phase (Co₂TiO₄) structure; when x ≥ 0.02, the larger ionic radius of Ba²⁺ induced phase separation and the formation of a secondary BaTiO₃ phase, with the secondary-phase peak intensity increasing with doping concentration. The coexistence of main and secondary phases in the Co_1.1Zn₀.87Ba₀.03TiO₄ ceramic was confirmed by Rietveld refinement. SEM demonstrated that appropriate Ba doping (x = 0.01–0.03) promoted grain growth, while excessive Ba doping (x = 0.04) led to microstructural deterioration. The Q×f value of the Co_1.1Zn₀.87Ba₀.03TiO₄ ceramic increased to 66,943.2 GHz, while the τ_f value was adjusted to −17.13 ppm/°C, effectively reducing dielectric loss and enhancing temperature stability.

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Ba2+离子取代增强Co1.1Zn0.9-xBaxTiO4陶瓷的微波介电性能

本研究通过掺杂Ba2 +离子对Co1.1Zn0.9TiO4陶瓷体系进行了修饰，提高了质量因子（Q×f），调整了τf值。采用固相反应法制备陶瓷样品，烧结温度为1125 ~ 1200℃。XRD显示，在低Ba掺杂浓度（x = 0-0.01）下，Ba2 +可以部分取代Zn2 +，保持立方尖晶石主相（Co2TiO4）结构；当x≥0.02时，Ba2⁺的离子半径越大，导致相分离，形成二次BaTiO3相，二次相峰强度随掺杂浓度的增加而增加。通过Rietveld细化证实了Co1.1Zn0.87Ba0.03TiO4陶瓷中主、次相共存。SEM结果表明，适当的Ba掺杂（x = 0.01 ~ 0.03）促进了晶粒的生长，而过量的Ba掺杂（x = 0.04）导致了晶粒的组织劣化。Co1.1Zn0.87Ba0.03TiO4陶瓷的Q×f值提高到66,943.2 GHz， τf值调整到- 17.13 ppm/°C，有效降低了介质损耗，提高了温度稳定性。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.