Comprehensive survey of tunnel FETs based on structure for low power consumptions

Abstract

The manuscript highlights the effect of the tunnel field effect transistors (TFETs). TFETs have special features like quick switching, compatibility with different materials, an uneven shape, low energy use before they turn on, the ability to be made smaller, and low power needs, which make them perfect for building tiny devices. The TFET is a low-power, high-sensitivity semiconductor device that could be utilized in ultra-low-power IoT devices, energy-efficient mobile processors, and AI accelerators. The review work in this manuscript analyzed how leakage current is decreased by the TFET's strong inverse subthreshold slope (SS). This paper compares various TFET structures and discusses recent advancements in the TFET technique, its purpose, and properties. Among the subjects discussed in this study are GAA, junctionless, heterojunction, charge plasma, dopingless, and multigate work functions.