Electrical and transport properties of chemically deposited YMnO3/Si thin film

Abstract

In this study, we explore the excitation frequency-dependent variations in the current-voltage (I-V) characteristics of chemical solution deposited YMnO₃ film on (100) n-type silicon (Si) substrate. X-ray diffraction analysis confirms the successful deposition of YMnO₃ film, revealing the presence of interfacial strain resulting from lattice mismatch. Atomic force microscopy further demonstrates that film possess a smooth surface with a root-mean-square roughness of approximately 3.94 nm. DC current-voltage (I-V) measurement under varying excitation frequencies indicate significant frequency-dependent modifications in the electrical properties of the YMnO₃ films, particularly in terms of threshold voltage shifts and changes in the I-V curve slope. These effects are primarily attributed to ferroelectric polarization and charge trapping and detrapping processes occurring at the interface between the film and the silicon substrate. The dielectric studies were carried out as a function of frequency and applied bias voltage, the dielectric constant was consistent with the Maxwell-Wagner type mechanism. Furthermore, voltage dependent dielectric measurements revealed polarization switching behavior and also confirmed the presence of space charge effects and trap controlled dynamics in system. These findings provides the insights into the frequency-tunable electrical and dielectric properties of YMnO₃/Si heterojunction, highlighting their potential application in frequency dependent memory devices, resistive switching and tunable electronic components.