A study on the influence of temperature on the output parameters of silicon heterojunction solar cells

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Sharifa B. Utamuradova, Evgeniy I. Terukov, Omonboy K. Ataboev, Irina E. Panaiotti, Artem I. Baranov, Oleg P. Mikhaylov
{"title":"A study on the influence of temperature on the output parameters of silicon heterojunction solar cells","authors":"Sharifa B. Utamuradova,&nbsp;Evgeniy I. Terukov,&nbsp;Omonboy K. Ataboev,&nbsp;Irina E. Panaiotti,&nbsp;Artem I. Baranov,&nbsp;Oleg P. Mikhaylov","doi":"10.1007/s10825-025-02400-8","DOIUrl":null,"url":null,"abstract":"<div><p>This work is devoted to the investigation of the influence of temperature on the output parameters of heterojunction solar cells based on n-type crystalline silicon in the range of 173–373 K under AM0 spectrum (136.7 mW/cm<sup>2</sup>). Experimental results revealed an <i>s</i>-shaped light current–voltage characteristics near the open-circuit voltage at low temperatures, which leads to a reduction in fill factor and conversion efficiency of heterojunction solar cells. The short-circuit current density was found to increase linearly with temperature, exhibiting a positive temperature coefficient of + 0.055%/K. The temperature dependence of the open-circuit voltage displayed more complex behavior: Its value decreased slowly between 173 K and 233 K, followed by a linear decrease at a higher rate above 233 K, characterized by a negative temperature coefficient of− 0.23%/K. The theoretically derived temperature dependence of the open-circuit voltage showed good agreement with the experimental data. Both the maximum output power and conversion efficiency of the heterojunction solar cells initially increased linearly with rising temperature from 173 K, reaching peak values of 25.2 mW/cm<sup>2</sup> and 18.53% at 233 K. However, with further temperature increase up to 373 K, both parameters decreased linearly. The maximum output power of the heterojunction solar cells exhibited two different negative temperature coefficients: − 0.15%/K in the range of 173–233 K and − 0.31%/K in the range of 273–373 K.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-025-02400-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This work is devoted to the investigation of the influence of temperature on the output parameters of heterojunction solar cells based on n-type crystalline silicon in the range of 173–373 K under AM0 spectrum (136.7 mW/cm2). Experimental results revealed an s-shaped light current–voltage characteristics near the open-circuit voltage at low temperatures, which leads to a reduction in fill factor and conversion efficiency of heterojunction solar cells. The short-circuit current density was found to increase linearly with temperature, exhibiting a positive temperature coefficient of + 0.055%/K. The temperature dependence of the open-circuit voltage displayed more complex behavior: Its value decreased slowly between 173 K and 233 K, followed by a linear decrease at a higher rate above 233 K, characterized by a negative temperature coefficient of− 0.23%/K. The theoretically derived temperature dependence of the open-circuit voltage showed good agreement with the experimental data. Both the maximum output power and conversion efficiency of the heterojunction solar cells initially increased linearly with rising temperature from 173 K, reaching peak values of 25.2 mW/cm2 and 18.53% at 233 K. However, with further temperature increase up to 373 K, both parameters decreased linearly. The maximum output power of the heterojunction solar cells exhibited two different negative temperature coefficients: − 0.15%/K in the range of 173–233 K and − 0.31%/K in the range of 273–373 K.

Abstract Image

Abstract Image

温度对硅异质结太阳能电池输出参数影响的研究
本文研究了在AM0光谱(136.7 mW/cm2)下,温度对n型晶体硅异质结太阳能电池输出参数在173 ~ 373 K范围内的影响。实验结果表明,低温下在开路电压附近存在s形的光电流电压特性,导致异质结太阳能电池的填充系数和转换效率降低。短路电流密度随温度线性增加,温度系数为+ 0.055%/K。开路电压的温度依赖性表现出更复杂的行为:在173 ~ 233 K之间,开路电压的值缓慢下降,在233 K以上,开路电压的值以更高的速率线性下降,其温度系数为负0.23%/K。理论推导的开路电压与温度的关系与实验数据吻合良好。从173 K开始,异质结太阳能电池的最大输出功率和转换效率都随着温度的升高而线性增加,在233 K时达到峰值25.2 mW/cm2和18.53%。然而,随着温度进一步升高至373 K,这两个参数线性下降。异质结太阳能电池的最大输出功率表现出两种不同的负温度系数:在173 ~ 233 K范围内为- 0.15%/K,在273 ~ 373 K范围内为- 0.31%/K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信