A 266-nW, 4.9-μVrms Noise, Wideband Neural Recording Amplifier With Folding-Current-Reuse Operational Transconductance Amplifier

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Minjae Kim;Jeongho Choi;Joongyu Kim;Sung-Yun Park
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引用次数: 0

Abstract

This letter presents a nano-watt, low-noise, ac-coupled wideband neural recording amplifier. The nano-watt power consumption has been achieved with 1) doubling of the transconductance by using folding current transistors in a folded-cascode operational transconductance amplifier (OTA) as input transistors [folding-current-reuse (FCR) technique], that also nulls their contribution to output noise and 2) dual supplies where the high and low voltages are assigned for low and high current consuming branches, respectively. Also, the proposed FCR technique indirectly contributes to low power consumption by forming low impedance nodes, which is a difference from a conventional current-reuse OTA in a two-stage amplifier that requires Miller compensation. The amplifier with the FCR technique has been fabricated in a 180 nm standard 1P6M complementary metal-oxide-semiconductor (CMOS) process. The fabricated chip has been experimentally verified both in benchtop and in vitro using a commercial silicon microelectrode. The amplifier consumes extremely low power of 266 nW from 0.4 and 0.6 V supplies, with the input referred noise of 4.9 μVrms in a wide bandwidth from 0.09 Hz to 7.56 kHz and exhibits 1% total harmonic distortion with an 2.4 mVpp input and an 40 dB closed-loop gain.
一种266-nW、4.9 μ vrms噪声、可折叠电流复用的宽带神经记录放大器
这封信介绍了一个纳米瓦,低噪声,交流耦合宽带神经记录放大器。纳米瓦特的功耗已经实现:1)通过在折叠级联运算跨导放大器(OTA)中使用折叠电流晶体管作为输入晶体管[折叠电流重用(FCR)技术],使跨导加倍,这也消除了它们对输出噪声的贡献;2)双电源,其中高电压和低电压分别分配给低电流和高电流消耗分支。此外,本文提出的FCR技术通过形成低阻抗节点间接有助于降低功耗,这与需要米勒补偿的两级放大器中的传统电流复用OTA不同。利用FCR技术在180 nm标准1P6M互补金属氧化物半导体(CMOS)工艺中制备了放大器。该芯片已在实验台上和体外使用商业硅微电极进行了实验验证。该放大器采用0.4 V和0.6 V电源,功耗极低,仅为266 nW,在0.09 Hz至7.56 kHz的宽带宽范围内,输入参考噪声为4.9 μVrms,总谐波失真为1%,输入2.4 mVpp,闭环增益为40 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Sensors Letters
IEEE Sensors Letters Engineering-Electrical and Electronic Engineering
CiteScore
3.50
自引率
7.10%
发文量
194
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