{"title":"High-yield photolithography protocol to pattern metallic electrodes on 2D materials without adhesive metallic layers","authors":"Wenwen Zheng , Kaichen Zhu , Sebastian Pazos , Yaqing Shen , Yue Yuan , Osamah Alharbi , Yue Ping , Mario Lanza","doi":"10.1016/j.apsadv.2025.100820","DOIUrl":null,"url":null,"abstract":"<div><div>When using two-dimensional (2D) materials to build electronic devices, adjacent metallic films need to be deposited to form electrodes. However, weak adhesion in high-quality van der Waals interfaces often leads to a low fabrication yield due to materials cracking and even peeling during photolithography. Several researchers use ultra-thin adhesive metallic layers, such as Ti, Cr, or Ni; while this method effectively enhances adhesion, all these metals are oxygen scavengers (in more or less degree) and they significantly alter the charge transport. Here we present a fabrication process for 2D-materials-based electronic devices that leads to high yield without the need of using adhesive metallic layers. Our method consists on using a discontinuous coverage of the 2D material during the photolithography step assisted by a negative photoresist, combined by electron beam evaporation of metal under moderate vacuum (5 × 10<sup>−6</sup> Torr) to produce a truly van der Waals interface and avoid damaging the 2D material. When using this improved method, we systematically achieve defect-free Au/hBN interfaces with good adhesion, which lead to 100 % fabrication yield (340 devices were fabricated correctly). Electrical characterization reveals low leakage currents below 10 pA and minimal device-to-device variability, demonstrating the process’s effectiveness. Our method provides a viable pathway towards the fabrication of 2D material-based electronic devices and circuits with higher performance and reliability.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"29 ","pages":"Article 100820"},"PeriodicalIF":8.7000,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science Advances","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S266652392500128X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
When using two-dimensional (2D) materials to build electronic devices, adjacent metallic films need to be deposited to form electrodes. However, weak adhesion in high-quality van der Waals interfaces often leads to a low fabrication yield due to materials cracking and even peeling during photolithography. Several researchers use ultra-thin adhesive metallic layers, such as Ti, Cr, or Ni; while this method effectively enhances adhesion, all these metals are oxygen scavengers (in more or less degree) and they significantly alter the charge transport. Here we present a fabrication process for 2D-materials-based electronic devices that leads to high yield without the need of using adhesive metallic layers. Our method consists on using a discontinuous coverage of the 2D material during the photolithography step assisted by a negative photoresist, combined by electron beam evaporation of metal under moderate vacuum (5 × 10−6 Torr) to produce a truly van der Waals interface and avoid damaging the 2D material. When using this improved method, we systematically achieve defect-free Au/hBN interfaces with good adhesion, which lead to 100 % fabrication yield (340 devices were fabricated correctly). Electrical characterization reveals low leakage currents below 10 pA and minimal device-to-device variability, demonstrating the process’s effectiveness. Our method provides a viable pathway towards the fabrication of 2D material-based electronic devices and circuits with higher performance and reliability.