Seungjik Lee;Jinman Myung;Geonwoo Park;Yoseph Kim;Ockgoo Lee;Ilku Nam
{"title":"Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off","authors":"Seungjik Lee;Jinman Myung;Geonwoo Park;Yoseph Kim;Ockgoo Lee;Ilku Nam","doi":"10.1109/OJPEL.2025.3594872","DOIUrl":null,"url":null,"abstract":"A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"1382-1389"},"PeriodicalIF":3.9000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106732","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE open journal of power electronics","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11106732/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.