A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yen-Chun Chen;Ran Hao;Adam Thompson;Mark Griswold;M. Cenk Çavuşoğlu
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引用次数: 0

Abstract

This letter proposes a Hall-effect-based MRI-safe force sensing mechanism. The proposed force sensing mechanism measures 1 degree-of-freedom force under the 3-T static magnetic field inside the bore of an MRI scanner by utilizing a Hall-effect sensor placed on the end of a cantilever beam. Specifically, the Hall-effect sensor detects the changes in the magnetic flux density when forces are applied to the cantilever beam and the orientation of the sensor attached to the cantilever beam changes. It outputs the voltage signals that are approximately proportional to the force applied. Experiments are conducted to evaluate the proposed force sensing mechanism's accuracy and repeatability.
基于霍尔效应的磁共振成像扫描仪内部力传感机构
这封信提出了一种基于霍尔效应的mri安全力传感机制。所提出的力传感机构利用放置在悬臂梁末端的霍尔效应传感器,在MRI扫描仪内的3-T静态磁场下测量1自由度的力。具体来说,霍尔效应传感器检测到当力施加到悬臂梁上时,以及附着在悬臂梁上的传感器的方向发生变化时磁通密度的变化。它输出的电压信号大约与施加的力成正比。实验验证了所提出的力传感机构的精度和可重复性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Sensors Letters
IEEE Sensors Letters Engineering-Electrical and Electronic Engineering
CiteScore
3.50
自引率
7.10%
发文量
194
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