Influence of electronic excitations on damage kinetics in SiC

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-08-13 DOI:10.1016/j.nimb.2025.165835

A.B. Serban , N. Djourelov , L. Thomé , G. Gutierrez

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引用次数: 0

Abstract

Silicon carbide is a versatile material renowned for its thermal stability and radiation resistance, making it a strong candidate for use in nuclear power plants, radiation detectors, and photovoltaic devices. This study investigates the formation and recovery of irradiation-induced defects in 6H-SiC using single (S_n) and dual (S_n&S_e, S_n + S_e) ion beam irradiation. Samples irradiated with 0.9-MeV I and 27-MeV Fe ions were used to independently and simultaneously probe nuclear (S_n) and electronic (S_e) energy loss effects. Damage kinetics were carried out by irradiating at different fluence levels. Defect evolution was characterized using variable energy slow positron Doppler Broadening Spectroscopy (DBS) and Rutherford backscattering spectrometry in channeling mode (RBS/C). The findings highlighted that double-beam irradiation can mitigate the amorphization effects typically observed under single-beam irradiation. It provided a deeper understanding of the SiC behavior under radiation, which is crucial for optimizing its performance and reliability in nuclear and photovoltaic applications.

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电子激发对SiC损伤动力学的影响

碳化硅是一种多功能材料，以其热稳定性和抗辐射性而闻名，使其成为核电厂，辐射探测器和光伏器件的强有力候选者。本研究采用单（Sn）和双（Sn&Se, Sn + Se）离子束辐照6H-SiC中辐照缺陷的形成和恢复。用0.9 mev I和27 mev Fe离子辐照样品，分别独立和同时探测核（Sn）和电子（Se）能量损失效应。在不同的辐照浓度下进行了损伤动力学研究。利用变能量慢正电子多普勒增宽光谱（DBS）和通道模式下的卢瑟福后向散射光谱（RBS/C）对缺陷演化进行了表征。研究结果表明，双束辐照可以减轻单束辐照下的非晶化效应。它提供了对SiC在辐射下行为的更深入了解，这对于优化其在核能和光伏应用中的性能和可靠性至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.