A 78.1 dB SNDR 10 MHz-BW continuous-time noise-shaping SAR ADC in 28 nm CMOS

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hui Zhang , Yong Li , Dawei Dong , Danben He , Yuan Gao , Jing Jin , Yuekang Guo , Lei Qiu , Zhenrong Li , Lin Cheng
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引用次数: 0

Abstract

A two-step analog-to-digital (ADC) structure that hybridizes continuous-time (CT) and noise-shaping (NS) successive-approximation-register (SAR) ADC can achieve high-speed while maintaining easy driving, anti-aliasing and high energy efficiency. However, the noise leakage caused by the RC time-constant mismatch and gain error of the inter-stage filter significantly limits the revolution and robustness. This work proposes a third-order mismatch and error shaping (MES) technique to address the issue without foreground/background calibration. Furthermore, to reduce the additional amplitude that increased cause by high-frequency input signals, a Gm-C filter with pre-subtraction (PS) technique was proposed. Designed in 28-nm CMOS, the prototype demonstrates a peak SNDR of 78.1 dB within a 10-MHz bandwidth, operating at 320 MS/s with a power consumption 2.6 mW. This results in a Schreier figure of merit (FoMs) of 173.9 dB. Additionally, the SNDR remains above 72 dB across RC time-constant mismatch and/or gain error ranging from −20 % to +20 %.
基于28nm CMOS的78.1 dB SNDR 10mhz - bw连续时间噪声整形SAR ADC
一种混合连续时间(CT)和噪声整形(NS)连续逼近寄存器(SAR) ADC的两步模数(ADC)结构可以在保持易于驾驶、抗混叠和高能效的同时实现高速。然而,由于RC时间常数失配和级间滤波器增益误差引起的噪声泄漏严重限制了转速和鲁棒性。这项工作提出了一种三阶失配和误差整形(MES)技术来解决没有前景/背景校准的问题。此外,为了降低高频输入信号增加的附加幅度,提出了一种预减法(PS) Gm-C滤波器。该原型采用28纳米CMOS设计,在10 mhz带宽内的峰值SNDR为78.1 dB,工作速度为320 MS/s,功耗为2.6 mW。这导致了173.9 dB的Schreier优值(FoMs)。此外,在RC时间常数失配和/或增益误差范围为- 20%至+ 20%的情况下,SNDR保持在72 dB以上。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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