Fabrication of energetic semiconductor Bridge with high efficiency, accuracy and low cost by 3D direct writing

Abstract

Enhancing the output capacity of semiconductor bridge (SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficiency of energetic semiconductor bridge (ESCB) is the primary focus for large-scale engineering applications in the future. Here, the Al/CuO nano-film ESCB was efficiently fabricated using 3D direct writing. The electrostatic safety of the film is enhanced by precisely adjusting the particle size of Al, while ensuring that the SCB can initiate the film with small energy. The burst characteristics of SCB/ESCB were thoroughly investigated by employing a 100 μF tantalum capacitor to induce SCB and ESCB under an intense voltage gradient. The solid-state heating process of both SCB and ESCB was analyzed with multi physical simulation (MPS). The experimental results demonstrate that the critical burst time of both SCB and ESCB decreases with increasing voltage. Under the same voltage, the critical burst time of ESCB is longer than that of SCB, primarily due to differences in the melting to vaporization stage. The MPS results indicate that the highest temperature is observed at the V-shaped corner of SCB. Due to the thermal contact resistance between SCB and the film, heat conduction becomes more concentrated in the central region of the bridge, resulting in a faster solid-state heating process for ESCB compared to SCB. The results of the gap ignition experiments indicate that at a 19 mm gap, an ESCB with a film mass of 10 mg can ignite nickel hydrazine nitrate (NHN) and cyclotrimethylenetrinitramine (RDX). This suggests that thermite ESCB can serve as a novel, safe, and reliable energy exchange element and initiator in large-scale engineering applications.