Point contacts in halide perovskite solar cells: from reduced interfacial recombination to increased ionic field screening.

EES solar Pub Date : 2025-07-26 DOI:10.1039/d5el00110b
Guorui He, Andrés-Felipe Castro-Méndez, Jonas Diekmann, Guus J W Aalbers, Paria Forozi Sowmeeh, Arpana Singh, Simon V Quiroz Monnens, Francisco Peña-Camargo, Martin Stolterfoht, Bernd Stannowski, Heinz Christoph Neitzert, René A J Janssen, Christian Michael Wolff, Dieter Neher, Felix Lang
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Abstract

The performance of p-i-n structured perovskite solar cells (PSCs) is primarily limited by the charge recombination at the interface between the perovskite and the electron transporting layer, most commonly C60. Inspired by the silicon passivated emitter rear cell design, we propose point contacts (PCs) to reduce the recombination at the perovskite/C60 interface. Inserting PCs between the perovskite and C60 layers enables an increased efficiency from 18.9% to 20.0%, which mainly originates from the reduced non-radiative recombination that leads to a higher open-circuit voltage (V OC) from 1.16 to 1.21 V. Combining a lithium fluoride (LiF) layer beneath the PCs (perovskite/LiF/PCs) can further boost the V OC to 1.26 V, reaching 90% of the detailed balance limit. However, we find that PCs exacerbate the effect of mobile ions in PSCs, accelerating the degradation under operando conditions. Our results reveal that mobile ions accumulate at the PCs, triggering a faster degradation of the device. These observations are further supported by one- and two-dimensional drift-diffusion simulations that confirm the accumulation of ions at the PCs. This work, therefore, highlights the importance of ion management for improved stability and points to a new degradation mechanism when a discontinuous insulating layer forms at the perovskite interfaces.

卤化物钙钛矿太阳能电池中的点接触:从减少的界面复合到增加的离子场筛选。
p-i-n结构钙钛矿太阳能电池(PSCs)的性能主要受到钙钛矿与电子传输层(最常见的是C60)界面电荷重组的限制。受硅钝化发射极后电池设计的启发,我们提出了点触点(pc)来减少钙钛矿/C60界面的复合。在钙钛矿层和C60层之间插入pc可以将效率从18.9%提高到20.0%,这主要是由于减少了非辐射复合,导致更高的开路电压(V OC)从1.16提高到1.21 V。在pc(钙钛矿/ liff / pc)下面结合氟化锂(liff)层可以进一步将V OC提高到1.26 V,达到详细平衡极限的90%。然而,我们发现pc加剧了psc中移动离子的影响,加速了操作条件下psc的降解。我们的研究结果表明,移动离子在pc中积累,引发设备更快的退化。这些观察结果进一步得到了一维和二维漂移扩散模拟的支持,证实了离子在pc上的积累。因此,这项工作强调了离子管理对提高稳定性的重要性,并指出了当在钙钛矿界面形成不连续绝缘层时,一种新的降解机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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