Crystal domain orientation control of epitaxial BaTiO3 films integrated on silicon for large electro-optic response

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-08-06 DOI:10.1063/5.0281487

Heungsoo Kim, Scott Mathews, Jason Tischler, Agham B. Posadas, Alexander A. Demkov, Alberto Piqué

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引用次数: 0

Abstract

BaTiO3 (BTO) is a ferroelectric material that has a large Pockels coefficient. Recently, there has been increasing interest in epitaxial BTO films integrated on silicon as a promising material platform for building electro-optic (EO) modulators. For BTO integration on Si, a SrTiO3 (STO) buffer layer was first deposited on a Si (001) substrate by molecular beam epitaxy. BTO films were then grown on this STO-buffered Si template via pulsed laser deposition at various oxygen pressures (10–50 mTorr) and substrate temperatures (600–760 °C). We found that the measured electro-optic response of the BTO films is highly dependent on their domain orientations and film thickness. By adjusting the oxygen deposition pressure and substrate temperature, we were able to grow a-oriented BTO films which are a preferred domain structure for EO modulators due to the large Pockels effect in this configuration. An effective Pockels coefficient of up to 432 pm/V was demonstrated in 500 nm thick BTO films in transmission measurements using 1550 nm light, showing the potential of BTO films for use in integrated silicon photonic devices.

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硅上集成外延BaTiO3薄膜大电光响应的晶畴取向控制

BaTiO3 （BTO）是一种具有较大波克尔斯系数的铁电材料。近年来，人们对集成在硅上的外延BTO薄膜越来越感兴趣，因为它是一种有前途的材料平台，用于构建电光（EO）调制器。为了在Si上集成BTO，首先通过分子束外延在Si（001）衬底上沉积了SrTiO3 （STO）缓冲层。然后在不同氧压（10-50 mTorr）和衬底温度（600-760°C）下，通过脉冲激光沉积在sto缓冲的Si模板上生长BTO薄膜。我们发现测量的BTO薄膜的电光响应高度依赖于它们的畴取向和薄膜厚度。通过调整氧沉积压力和衬底温度，我们能够生长出a取向的BTO薄膜，由于这种结构中的大波克尔斯效应，它是EO调制器的首选畴结构。在使用1550 nm光的传输测量中，在500 nm厚的BTO薄膜中显示了高达432 pm/V的有效Pockels系数，显示了BTO薄膜在集成硅光子器件中的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.