Sb₂Se₃microwires/ZnO nanoparticles heterojunction for high performances self-powered photodetector.

IF 2.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2025-08-14 DOI:10.1088/1361-6528/adf7af

Zhengtao Lu, Zhiyong Gao, Lin Sun, Pingping Yu

{"title":"Sb2Se3microwires/ZnO nanoparticles heterojunction for high performances self-powered photodetector.","authors":"Zhengtao Lu, Zhiyong Gao, Lin Sun, Pingping Yu","doi":"10.1088/1361-6528/adf7af","DOIUrl":null,"url":null,"abstract":"Self-powered photodetectors play a crucial role in technology, garnering attention for their diverse applications. However, most current models face challenges such as reliance on external power, complex fabrication, and inconvenient usability. Sb2Se3presents a promising solution for p-type semiconductors in photovoltaic cells, owing to ideal bandgap and excellent light absorption. In this study, Sb2Se3microwires (MWs) synthesized by hydrothermal method was modified with zinc oxide (ZnO) nanoparticles (NP) to create the Sb2Se3-MW/ZnO NP heterostructure, designed to build a highly efficient photodetector featuring interdigitated electrodes. The Sb2Se3-MW/ZnO NP device exhibits self-powered characteristics and strong photoresponse from 350 to 1000 nm, achieving a photoresponsivity of 120 mA W-1at 368 nm (1.21 mW cm-2), an on/off ratio of 257, and a peak detection rate of 8.93 × 1011Jones. This innovative heterostructure significantly broadens the light response range, proving that the Sb2Se3-MW/ZnO-NP heterojunction is a major step toward high-performance, self-powered optoelectronic devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adf7af","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Self-powered photodetectors play a crucial role in technology, garnering attention for their diverse applications. However, most current models face challenges such as reliance on external power, complex fabrication, and inconvenient usability. Sb₂Se₃presents a promising solution for p-type semiconductors in photovoltaic cells, owing to ideal bandgap and excellent light absorption. In this study, Sb₂Se₃microwires (MWs) synthesized by hydrothermal method was modified with zinc oxide (ZnO) nanoparticles (NP) to create the Sb₂Se₃-MW/ZnO NP heterostructure, designed to build a highly efficient photodetector featuring interdigitated electrodes. The Sb₂Se₃-MW/ZnO NP device exhibits self-powered characteristics and strong photoresponse from 350 to 1000 nm, achieving a photoresponsivity of 120 mA W^-1at 368 nm (1.21 mW cm^-2), an on/off ratio of 257, and a peak detection rate of 8.93 × 10¹¹Jones. This innovative heterostructure significantly broadens the light response range, proving that the Sb₂Se₃-MW/ZnO-NP heterojunction is a major step toward high-performance, self-powered optoelectronic devices.

查看原文本刊更多论文

用于高性能自供电光电探测器的sb2se3微线/ZnO纳米颗粒异质结。

自供电光电探测器在技术中发挥着至关重要的作用，其多种应用引起了人们的关注。然而，目前的大多数模型都面临着诸如依赖外部电源、复杂制造和不方便使用等挑战。Sb2Se3具有理想的带隙和优异的光吸收性能，是光伏电池中p型半导体的理想解决方案。本研究利用水热法合成的Sb2Se3微线（MWs），用ZnO纳米粒子（NP）修饰，形成Sb2Se3- mw /ZnO NP异质结构，旨在构建具有交错电极的高效光电探测器。Sb2Se3-MW/ZnO NP器件具有自供电特性，在350 ~ 1000 nm范围内具有较强的光响应，在368 nm （1.21 mW cm-2）处的光响应率为120 mA W-1，开/关比为257，峰值检测率为8.93×1011 Jones。这种创新的异质结构显著拓宽了光响应范围，证明Sb2Se3-MW/ZnO-NP异质结是迈向高性能、自供电光电器件的重要一步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.